Single-photon detector apparatus comprising a large core optical fiber with a core diameter larger than 8 .Math.m, a small core optical fiber with a core diameter smaller or equal to 5 .Math.m, a taper between the large core optical fiber and the small core optical fiber, a superconducting nanowire having a surface area configured to receive all photons emitted from the small core optical fiber and cost effective and high yield method for manufacturing such.

An optical device and a spectral detection apparatus are provided. The optical device includes an optical waveguide, including: a polychromatic light channel configured to transport a polychromatic light beam, and provided with a light incident surface for receiving the incident polychromatic light beam at an input end of the polychromatic light channel; a chromatic dispersion device arranged downstream from the polychromatic light channel in an optical path and configured to separate the polychromatic light beam from the polychromatic light channel into a plurality of monochromatic light beams; and a plurality of monochromatic light channels arranged downstream from the chromatic dispersion device in the optical path and configured to respectively conduct the plurality of monochromatic light beams with different colors from the chromatic dispersion device. Monochromatic light output surfaces are respectively provided at output ends of the plurality of monochromatic light channels and configured to output the monochromatic light beams.

A method of making a photonic integrated circuit (PIC) is provided. The method comprises depositing a functional resist material layer over a substrate, disposing and pressing a stamp with a plurality of nanopatterns into the functional resist material for a period of time, and removing the stamp from the functional resist material to provide nanofeatures that are inverted versions of the nanopatterns, wherein the nanofeatures form one or more optical elements.

Configurations are disclosed for multi-wavelength optical devices and systems. In particular, multi-wavelength optical devices that include separate chips optically connected via phonic wire bonds. The disclosed configurations can utilize photonic wire bond interconnects and photonic wire bond interconnection techniques, which may facilitate low-cost implementation of wavelength division multiplexed optical systems.

A difference Δ1 between an equivalent refractive index of a first reflecting section and an equivalent refractive index of a core in a first region that corresponds to the first reflecting section and a difference between an equivalent refractive index of a second reflecting section and an equivalent refractive index of the core in a second region that corresponds to the second reflecting section is set so as to be greater than a difference between an equivalent refractive index of a confining section and an equivalent refractive index of the core in a third region that corresponds to the confining section.

A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

An apparatus for outputting directional light includes a light-emitting structure including a light-emitting layer that emits light, and an optical antenna layer disposed on the light-emitting structure, wherein the optical antenna layer includes a light feeder configured to resonate light output from the light-emitting layer and a light reflector configure to reflect light output from the light feeder to have directivity. The light feeder and the light reflector are formed on a surface of the optical antenna layer.

Tapered cavity structures disposed within a stratum may be configured as a spectral component splitters, a spectral component combiners, and various combinations thereof including a reflective mode of operation. The tapered cavities have an aperture at their wider and a tip at the narrower, and are dimensioned such that multi-spectral radiant energy admitted into the cavity via the aperture would depart the tapered cavity via its side periphery at a depth and/or direction dependent on its frequency and/or its polarization, and that a plurality of spectral components admitted to the cavities via the its peripheral side or sides will be mixed and emitted via the aperture. Reflective type structures where portions of radiant energy is selectively absorbed and other portions are reflected are also considered. Differing stratums are disclosed. Applications of the tapered cavities in a stratum are also disclosed

A bricked sub-wavelength periodic waveguide and a modal adapter, power divider and polarization splitter that use the waveguide. The waveguide includes blocks disposed periodically with a period “L.sub.z” on a substrate and which alternate with a covering material. The first blocks have a width “a.sub.x” and the second blocks have a width “b.sub.x”, alternating on the substrate according to a period “L.sub.x”, the second blocks being shifted a distance “d.sub.z” the first blocks in the direction of propagation. A modal adapter, a power divider and a polarization splitter all use the periodic waveguide and can operate with larger wave periods without leaving the sub-wavelength regime.

A graphene optical device according to an embodiment of the present disclosure includes: an upper semiconductor layer; a lower semiconductor layer; and a graphene capacitor disposed between the upper semiconductor layer and the lower semiconductor layer, wherein the graphene capacitor includes a first graphene, a second graphene, and a first insulation layer disposed between the first graphene and the second graphene, wherein the first graphene and the second graphene partially overlap each other when viewed from the upper semiconductor layer toward the lower semiconductor layer.