A disclosed multimode optical fiber comprises a core and a cladding surrounding the core. The core has an outer radius r.sub.1 in between 20 μm and 30 μm. The cladding includes a first outer cladding region having an outer radius r.sub.4a and a second outer cladding region having an outer radius r.sub.4b less than or equal to 45 μm. The second outer cladding region comprises silica-based glass doped with titania. The optical fiber further includes a primary coating with an outer radius r.sub.5 less than or equal to 80 μm, and a thickness (r.sub.5−r.sub.4) less than or equal to 30 μm. The optical fiber further includes a secondary coating with an outer radius r.sub.6 less than or equal to 100 μm. The secondary coating has a thickness (r.sub.6−r.sub.5) less than or equal to 30 μm, and a normalized puncture load greater than 3.6×10.sup.−3 g/micron.sup.2.

A method to form a three-dimensional photonic crystal template with a gradient structure involves irradiating a photoresist composition of a thickness of at least 15 μm from at least four laser beams to yield a periodic patterned with a percolating matrix of mass in constructive volumes of a cured photoresist composition and destructive volumes of voids free of condensed matter where the proportion of constructive volume displays a gradient from the irradiated surface to the substrate after development. For a given light intensity, photoinitiator concentration in the photoresist composition, and a given thickness, by irradiating for a relatively short period, a three-dimensional photonic crystal template displaying a gradient having greater constructive volume proximal the air interface forms and a relatively long irradiation period results in a gradient having greater constructive volume proximal the substrate.

Described herein are stacked photonic integrated circuit (PIC) assemblies that include multiple layers of waveguides. The waveguides are formed of substantially monocrystalline materials, which cannot be repeatedly deposited. Layers of monocrystalline material are fabricated and repeatedly transferred onto the PIC structure using a layer transfer process, which involves bonding a monocrystalline material using a non-monocrystalline bonding material. Layers of isolation materials are also deposited or layer transferred onto the PIC assembly.

Techniques disclosed herein relate to devices that each include one or more photonic integrated circuits and/or one or more electronic integrated circuits. In one embodiment, a device includes a silicon substrate, a die stack bonded (e.g., fusion-bonded) on the silicon substrate, and a printed circuit board (PCB) bonded on the silicon substrate, where the PCB is electrically coupled to the die stack. The die stack includes a photonic integrated circuit (PIC) that includes a photonic integrated circuit, and an electronic integrated circuit (EIC) die that includes an electronic integrated circuit, where the EIC die and the PIC die are bonded face-to-face (e.g., by fusion bonding or hybrid bonding) such that the photonic integrated circuit and the electronic integrated circuit face each other. In some embodiments, the device also includes a plurality of optical fibers coupled to the photonic integrated circuit.

A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.

A holographic waveguide LIDAR having a transmitter waveguide coupled to a beam deflector and a receiver waveguide coupled to a detector module. The transmitter waveguide contains an array of grating elements for diffracting a scanned laser beam into a predefined angular ranges. The receiver waveguide contains an array of grating elements for diffracting light reflected from external points within a predefined angular range towards the detector module.

A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Provided herein are biocompatible scaffolds engineered to convey growth stimulatory light to cells and augment their growth on the scaffolds both in vitro and in vivo. Also provide are methods of modifying biocompatible transparent waveguides to control delivery of light from the waveguide material.

An optical waveguide includes a first waveguide core, a second waveguide core, a first subwavelength multilayer cladding, a second subwavelength multilayer cladding and a third subwavelength multilayer cladding. The first waveguide core and the second waveguide core have a width (w) and a height (h). The first waveguide core is disposed between the first subwavelength multilayer cladding and the second subwavelength multilayer cladding. The second waveguide core is disposed between the second subwavelength multilayer cladding and the third subwavelength multilayer cladding. Each subwavelength multilayer cladding has a number (TV) of alternating subwavelength ridges having a periodicy (A) and a filling fraction (p). A total coupling coefficient (|/c|) of the first waveguide core and the second waveguide core is from 10 to 0.