A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

A device forming a photonic phased array antenna includes a low-refractive dielectric substrate, a nano-structured thin film formed on the low-refractive dielectric structure, and a high-refractive semiconductor waveguide formed over the low-refractive dielectric substrate and configured to operate in a single mode in the nano-structured thin film, wherein an antenna radiating a phase-modulated light wave to a free space is miniaturized to concentrate a radiated beam of a phased array antenna and to widen a scanning range.

An optical waveguide includes a first waveguide core, a second waveguide core, a first subwavelength multilayer cladding, a second subwavelength multilayer cladding and a third subwavelength multilayer cladding. The first waveguide core and the second waveguide core have a width (w) and a height (h). The first waveguide core is disposed between the first subwavelength multilayer cladding and the second subwavelength multilayer cladding. The second waveguide core is disposed between the second subwavelength multilayer cladding and the third subwavelength multilayer cladding. Each subwavelength multilayer cladding has a number (TV) of alternating subwavelength ridges having a periodicy (A) and a filling fraction (p). A total coupling coefficient (|/c|) of the first waveguide core and the second waveguide core is from 10 to 0.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

A photonic polarization splitter rotator (PSR) includes a substrate, a first optical waveguide disposed in the substrate on a first layer, the first optical waveguide having a curved portion between a first end of the first optical waveguide and a second end of the first optical waveguide, and a second optical waveguide disposed in the substrate on a second layer, above the first layer, the second optical waveguide having a substantially rectangular shape and longitudinally arranged between the first end of the first optical waveguide and the second end of the first optical waveguide.

A process for forming glass planar waveguide structure includes producing or obtaining a fusion drawn glass laminate (10) comprising a core glass layer (10) and a first clad glass layer (14) and a second clad glass layer (16) then removing or thinning portions of at least the second glass clad layer (16) leaving remaining or thicker portions of the second glass clad layer (16), the remaining or thicker portions corresponding to a planar waveguide pattern and resulting in a glass planar waveguide structure.

An optical fiber array includes a V-groove substrate in which a V-groove for optical fiber alignment is formed, a pressing plate laminated and bonded on the V-groove substrate, and an optical fiber bonded and fixed in the V-groove of the V-groove substrate, wherein a distance between the optical fiber and the V-groove is less than 20 μm.

A highly-efficient ridge waveguide includes a base substrate of a single-crystal and a core substrate made of a nonlinear optical medium, the base substrate and the core substrate being directly bonded, and includes a thin film layer formed on a surface of the core substrate on the upper side of a periodically polarization-reversed structure, and becomes a wavelength conversion element. A direct bonding method through thermal diffusion is applied to bonding. The core substrate has a ridge structure formed in a light propagating direction and a reversed structure formed by processing this. A surface of the core substrate is ground and a thin film layer is formed on the ground surface. A core formed by digging a core layer of the core substrate in an unbonded state is provided on an upper surface of an undercladding layer of the base substrate in a bonded state. Two side surfaces of the core are in contact with an air layer.

A manufacturing method of an optical waveguide device that allows light to propagate through a core formed within a cladding formed on a substrate, the core having a higher refractive index than the cladding, includes: layering a first cladding-material layer for the cladding and a core-material layer for the core sequentially on the substrate; forming the layered core-material layer into the core having a waveguide shape, and removing a first part of the core, the first part being positioned at a portion where a slit is to be formed, to thereby form a gap in the core; layering a second cladding-material layer for the cladding to cover the first cladding-material layer and the core; and removing, by dry-etching, a second part of the first and second cladding-material layers, the second part being positioned at the portion where the slit is to be formed, to thereby form the slit.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.