A beam splitter arrangement for an optoelectronic sensor, an optoelectronic sensor having such a beam splitter arrangement, and a method of beam splitting in an optoelectronic sensor are provided, wherein the beam splitter arrangement has at least one input for coupling first transmitted light beams having first transmitted light pulses into the beam splitter arrangement. At least one beam splitter splits the first transmitted light beams into a plurality of second transmitted light beams having second transmitted light pulses. The beam splitter arrangement further has a plurality of outputs for decoupling the second transmitted light beams from the beam splitter arrangement, with the number of outputs being greater than the number of inputs. Optical compression paths that compress the second transmitted light pulses such that a second pulse length of the second transmitted light pulses is shorter than a first pulse length of the first transmitted light pulses are arranged downstream of at least one beam splitter.

A method to form a three-dimensional photonic crystal template with a gradient structure involves irradiating a photoresist composition of a thickness of at least 15 μm from at least four laser beams to yield a periodic patterned with a percolating matrix of mass in constructive volumes of a cured photoresist composition and destructive volumes of voids free of condensed matter where the proportion of constructive volume displays a gradient from the irradiated surface to the substrate after development. For a given light intensity, photoinitiator concentration in the photoresist composition, and a given thickness, by irradiating for a relatively short period, a three-dimensional photonic crystal template displaying a gradient having greater constructive volume proximal the air interface forms and a relatively long irradiation period results in a gradient having greater constructive volume proximal the substrate.

A metasurface optical device includes a substrate and a nano-structure layer. The nano-structure layer is arranged on the substrate and includes a plurality of photonic crystal units. Each photonic crystal unit includes a plurality of nano-structure units arranged on the substrate such that an energy bandgap is formed in a cross-section of the photonic crystal unit parallel to the substrate. The energy bandgap surrounds the center area of the cross-section.

Structures including an optical component and methods of forming a structure including an optical component. The structure includes an optical component on a substrate, and a back-end-of-line stack including multiple metal levels. Each of the metal levels includes a dielectric layer and metal features positioned over the optical component as metal fill in the dielectric layer. The metal features in at least two of the metal levels are arranged to overlap such that the optical component is fully covered normal to the substrate.

This disclosure relates to an optical device comprising: a first filter waveguide section having an input for receiving a pump signal, the first filter waveguide section further having an output; an emitter waveguide section having an input coupled to the output of the first filter waveguide section to receive a transmitted pump signal therefrom, the emitter waveguide section supporting at least a first guided lower-order optical mode and a second guided higher-order optical mode, the emitter waveguide section comprising a photon emitter coupled to the first guided mode to emit radiation into the first guided mode and coupled to the second guided mode to allow optical pumping of the photon emitter by pump signal power carried in the second guided mode, the emitter waveguide section further having an output for outputting radiation emitted from the photon emitter; a second filter waveguide section having an input coupled to the output of the emitter waveguide section and having an output, the second filter waveguide section being configured to transmit radiation emitted into the first guided mode with lower loss than radiation emitted into modes other than the first guided mode; the first filter waveguide section being configured to couple pump signal power predominantly into the second guided mode of the emitter section.

Methods, systems, and devices are described for generating an optical signal. An example device may comprise a chip and a waveguide disposed on the chip and comprising silicon nitride. The waveguide may be configured to generate, based on nonlinear effects applied to a pump signal from a pump laser, an optical signal having a broader spectrum than the pump signal. The waveguide may have a width and a height such that the optical signal has near zero group-velocity-dispersion.

A metasurface optical device includes a substrate and a nano-structure layer disposed on the substrate. The nano-structure layer includes a plurality of composite nano units each including a plurality of nano-structure units arranged on the substrate. Arrangement periods of the plurality of composite nano units are not completely same, and arrangement periods of the plurality of nano-structure units in one composite nano unit of the plurality of composite nano units are not completely same.

Described herein are photonic integrated circuits (PICs) comprising a semiconductor optical amplifier (SOA) to output a signal comprising a plurality of wavelengths, a sensor to detect data associated with a power value of each wavelength of the output signal of the SOA, a filter to filter power values of one or more of the wavelengths of the output signal of the SOA, and control circuitry to control the filter to reduce a difference between a pre-determined power value of each filtered wavelength of the output signal of the SOA and the detected power value of each filtered wavelength of the output signal of the SOA.

A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elements and/or active elements, the interface being produced on the surface of a second silicon-based substrate; removing the first silicon-based substrate and the at least elementary base layer located on the elementary structure.

A method includes forming multiple photonic devices in a semiconductor wafer, forming a v-shaped groove in a first side of the semiconductor wafer, forming an opening extending through the semiconductor wafer, forming multiple conductive features within the opening, wherein the conductive features extend from the first side of the semiconductor wafer to a second side of the semiconductor wafer, forming a polymer material over the v-shaped groove, depositing a molding material within the opening, wherein the multiple conductive features are separated by the molding material, after depositing the molding material, removing the polymer material to expose the v-shaped groove, and placing an optical fiber within the v-shaped groove.