An embodiment is an optical connection element including a first waveguide core and a second waveguide core on a substrate, the first waveguide core and the second waveguide core configured to propagate a signal light and a resin-curing light, and a mode field conversion portion provided at one end of the first waveguide core, wherein the second waveguide core covers at least the mode field conversion portion on the substrate, and a refractive index of the first waveguide core is higher than a refractive index of the second waveguide core.

An embodiment is an optical connection element including a first waveguide core and a second waveguide core on a substrate, the first waveguide core and the second waveguide core configured to propagate a signal light and a resin-curing light, and a mode field conversion portion provided at one end of the first waveguide core, wherein the second waveguide core covers at least the mode field conversion portion on the substrate, and a refractive index of the first waveguide core is higher than a refractive index of the second waveguide core.

A method and apparatus for mass production of AR diffractive waveguides. Low-cost mass production of large-area AR diffractive waveguides (slanted surface-relief gratings) of any shape. Uses two-photon polymerization micro-nano 3D printing to realize manufacturing of slanted grating large-area masters of any shape (thereby solving the problem about manufacturing of slanted grating masters of any shape on the one hand, realizing direct manufacturing of large-size wafer-level masters on the other hand, and also having the advantages of low manufacturing cost and high production efficiency). Composite nanoimprint lithography technology is employed (in combination with the peculiar imprint technique and the composite soft mold suitable for slanted gratings) to solve the problem that a large-slanting-angle large-slot-depth slanted grating cannot be demolded and thus cannot be manufactured, and realize the manufacturing of the slanted grating without constraints (geometric shape and size).

An implantable optical sensor (1) comprising a substrate (2) and at least one optical microstructure (3) for evanescent field sensing integrated with the substrate (2), the at least one optical microstructure (3) being positioned to form an optical interaction area (4) on a part of a surface (5) of the substrate (2), the optical assembly (1) further comprising a thin protective layer (6) covering at least the optical interaction area (4), the thin protective layer (6) being in a predetermined material with corrosion-protection characteristics and having a predetermined thickness, so as not to affect the evanescent field sensing.

Described herein are hybrid IC assemblies that include multiple stacked layers of electronic and/or photonic circuit elements. For example, a first layer of the IC assembly includes a waveguide formed of a substantially monocrystalline material, and a second layer of the IC assembly includes at least one electronic circuit element. A bonding material between a front face of the first layer and a back face of the second layer attaches the first layer to the second layer. The bonding material has a lower crystallinity than the waveguide.

A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

A LIDAR system includes a light source configured to output a source signal. The LIDAR chip is also configured to output a LIDAR output signal that exits from the LIDAR chip. The LIDAR system also includes an isolator adapter that includes an optical isolator configured to receive an adapter signal. The adapter signal includes light that is from the source signal and that has exited from the LIDAR chip before being received by the optical isolator. The isolator is configured to output light from the adapter signal in an isolator output signal. Additionally, the LIDAR output signal includes light from the isolator output signal.

A LIDAR system includes a light source configured to output a source signal. The LIDAR chip is also configured to output a LIDAR output signal that exits from the LIDAR chip. The LIDAR system also includes an isolator adapter that includes an optical isolator configured to receive an adapter signal. The adapter signal includes light that is from the source signal and that has exited from the LIDAR chip before being received by the optical isolator. The isolator is configured to output light from the adapter signal in an isolator output signal. Additionally, the LIDAR output signal includes light from the isolator output signal.

A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.