An assembly including a first waveguide produced in a first photonic chip and that extends in a first direction in order to guide an optical signal at a wavelength λ, an array of a plurality of second waveguides, which is produced in a second photonic chip adjoined to the first photonic chip, and a power summer including inputs that are optically connected to one end of each of the second waveguides. Each of the second waveguides includes upstream and downstream segments that are offset with respect to each other in the second direction. The configurations of the first waveguide and of the second waveguides are such that, for any position of the first waveguide above the array, the distance between one of the segments of the first waveguide and one of the segments of one of the second waveguides is smaller than λ/2.

The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Example embodiments relate to imaging systems and methods for acquisition of multi-spectral images. One example imaging system includes a detector that includes an array of light sensitive elements arranged in rows and columns. Each light sensitive element is configured to generate a signal dependent on an intensity of light incident onto the light sensitive element. The imaging system also includes a plurality of wavelength separating units. Each wavelength separating unit is configured to spatially separate incident light within a wavelength range into a number of wavelength bands distributed along a line. The line is a straight line. Each wavelength band along the line is associated with a mutually unique light sensitive element. Further, the imaging system includes a processing unit configured to define a number of mutually unique clusters of light sensitive elements for summing signals from the light sensitive elements within the respective clusters.

The invention relates to an optical waveguide with two or more light-guiding cores (1a-1e) extending continuously along the longitudinal extension of the optical waveguide, parallel to one another and spaced apart from one another, from one end of the optical waveguide to the other, and with a first cladding (2) enclosing the cores (1a-1e). It is an object of the invention to provide a multicore optical waveguide for high-power operation with reduced system complexity compared to the prior art. This object is achieved by the invention in that the cores (1a-1e) are arranged relative to one another and are spaced apart from one another in such a way that the propagation modes of the light propagating in the optical waveguide at a working wavelength couple to one another, the length of the optical waveguide being selected such that the light coupled into only a single one of the cores (1a-1e) at one end of the optical waveguide first spreads to the other cores (1a-1e) during propagation through the optical waveguide and, after passing through the optical waveguide, leaves the optical waveguide again at the other end from a single core (1a) with at least 60%, preferably at least 75%, of the total light power propagating in the optical waveguide. The invention also relates to a laser system with such an optical waveguide as an optical amplifier, and a method for guiding light in an optical waveguide.

An optical device may include at least two waveguides with different propagation constants. Each waveguide is associated with a grating antenna with a grating period selected to emit light at the same emission angle despite the different propagation constants. Each waveguide may be part of an optical path that includes phase shifters. Additionally, the waveguides may be formed in a waveguide layer that is separate from a perturbation layer in which the grating antennas as formed.

Systems and methods for a time-based optical pickoff for MEMS sensors are provided. In one embodiment, a method for an integrated waveguide time-based optical-pickoff sensor comprises: launching a light beam generated by a light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting changes in an area of overlap between the coupling port and a moving sensor component separated from the coupling port by a gap by measuring an attenuation of the light beam at the optical output port, wherein the moving sensor component is moving in-plane with respect a surface of the first substrate comprising the coupling port and the coupling port is positioned to detect movement of an edge of the moving sensor component.

A first waveguide core is configured to receive light via an input surface. The first waveguide core extends away from the input surface in a light propagation direction and terminates at a coupling region. A second waveguide core has a first end at the coupling region and a second end at a media-facing surface that is opposed to the input surface. The first end is separated from the termination of the first waveguide core by a gap in the coupling region. The coupling region includes an overlap between the first and second waveguide cores and is configured to promote evanescent coupling between the first and second waveguide cores.

A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.