Various embodiments of the present technology enable growth of a-axis oriented barium titanate (BTO) films by inserting a relaxed strain control layer having a larger lattice constant than the c-axis of BTO and a similar thermal expansion mismatch. As a result, in-plane tensile stress causes BTO to grow with its ferroelectric polarization in-plane. Some embodiments allow for BTO films to immediately be grown on silicon with a-axis orientation, and without the need to create thick layers for relaxation. Using various embodiments of the present technology, the BTO can be grown in-plane with minimal dislocation density that is confined to the interface region.

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

A transparent optical element may include a layer of an electroactive ceramic disposed between transparent electrodes, such that the electrodes are each oriented perpendicular to a non-polar direction of the ceramic layer. Optical properties of the optical element, including transmissivity, haze, and clarity may be improved by the application of a voltage to the electroactive ceramic, and an associated phase transformation.

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

An adjustable optical switch based on a PLZST antiferroelectric photonic crystal, and an adjusting and control method thereof, which belongs to the technical field of micro and nano optoelectronic devices. The adjustable optical switch based on a PLZST antiferroelectric photonic crystal includes an air column type photonic crystal with a diameter of air columns of 420 nm, and a spacing of air columns of 200 nm. According to the present disclosure, a photonic crystal switch is designed by utilizing the coupling property between photonic crystals, and the central wavelength of optical waves is adjusted through the action of the electric field, so that an electro-optical switch with a central wavelength adjustable in a wide range is provided, and has a response speed of less than 1 nanosecond, and the central wavelength can be adjusted in a range of 1100 nm to 1750 nm.

An adjustable optical switch based on a PLZST antiferroelectric photonic crystal, and an adjusting and control method thereof, which belongs to the technical field of micro and nano optoelectronic devices. The adjustable optical switch based on a PLZST antiferroelectric photonic crystal includes an air column type photonic crystal with a diameter of air columns of 420 nm, and a spacing of air columns of 200 nm. According to the present disclosure, a photonic crystal switch is designed by utilizing the coupling property between photonic crystals, and the central wavelength of optical waves is adjusted through the action of the electric field, so that an electro-optical switch with a central wavelength adjustable in a wide range is provided, and has a response speed of less than 1 nanosecond, and the central wavelength can be adjusted in a range of 1100 nm to 1750 nm.

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

A pixel for creating an optical phase change includes a transparent electrical insulator, a first electrical conductor disposed on the transparent electrical insulator, the first electrical conductor comprising an antenna component and a connector component, an electrical insulator disposed on the first electrical conductor, a transparent semiconductor disposed on the electrical insulator, and a second electrical conductor disposed on the transparent semiconductor. The transparent semiconductor is sufficiently thick to prevent plasmonic resonance from occurring at an interface between the transparent semiconductor and the second electrical conductor.

A transparent optical element may include a layer of an electroactive ceramic disposed between transparent electrodes, such that the electrodes are each oriented perpendicular to a non-polar direction of the ceramic layer. Optical properties of the optical element, including transmissivity, haze, and clarity may be improved by the application of a voltage to the electroactive ceramic, and an associated phase transformation.

Various embodiments of the present technology enable growth of a-axis oriented barium titanate (BTO) films by inserting a relaxed strain control layer having a larger lattice constant than the c-axis of BTO and a similar thermal expansion mismatch. As a result, in-plane tensile stress causes BTO to grow with its ferroelectric polarization in-plane. Some embodiments allow for BTO films to immediately be grown on silicon with a-axis orientation, and without the need to create thick layers for relaxation. Using various embodiments of the present technology, the BTO can be grown in-plane with minimal dislocation density that is confined to the interface region.