Provided are a display panel and manufacturing method thereof, control method and display apparatus. The display panel includes a first substrate including first base substrate and driving structure layer, and a second substrate including second base substrate and black matrix layer, driving structure layer includes multiple switching transistors, the display panel includes multiple pixel units, each pixel unit includes a switching transistor. One side of black matrix layer close to first substrate is provided with multiple groove structures corresponding to multiple pixel units one-to-one. Orthographic projection of black matrix layer on first base substrate covers those of multiple switching transistors on first base substrate, and orthographic projection of the groove structure on first base substrate at least partially overlaps with that of a channel region of switching transistor in corresponding pixel unit on first base substrate to enable light meeting preset wavelength condition to be incident into the display panel.

A display panel and method of manufacturing the same are provided. The method of manufacturing the display panel includes the steps of providing a substrate, forming a gate on the substrate, forming a gate insulating layer on the gate and the substrate, forming a polysilicon layer on the gate insulating layer, performing a first gray-scale mask process on the polysilicon layer to form a source region, a drain region and an active region located between the source region and the drain region by the polysilicon layer, forming an interlayer dielectric layer on the gate insulating layer and the polysilicon layer, forming a first electrode layer on the interlayer dielectric layer, performing a second gray-scale mask process on the first electrode layer and the interlayer dielectric layer.

The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

A liquid crystal display device includes a transistor, a pixel electrode, and a common electrode. The transistor includes a first gate electrode on a first substrate, a second gate electrode having a region overlapping the first gate electrode, an oxide semiconductor layer between the first gate electrode and the second gate electrode, a first insulating layer between the first gate electrode and the oxide semiconductor layer, a second insulating layer between the oxide semiconductor layer and the second gate electrode, and a first oxide conductive layer and a second oxide conductive layer disposed between the first insulating layer and the oxide semiconductor layer and disposed with the first gate electrode and the second gate electrode sandwiched from both sides. The pixel electrode is disposed between the first and the second insulating layer; the common electrode is disposed a region overlapping with the pixel electrode and on the second insulating layer.

A halftone mask, a manufacturing method of a display panel, and an ultraviolet mask are disclosed. The halftone mask includes a substrate, a plurality of light-blocking parts, and a plurality of semi-transmissive parts. Wherein, the semi-transmissive parts correspond to a thinned patterning area of a first target object and a hollowed patterning area of a second target object.

An FFS mode array substrate and a manufacturing method thereof are provided. The FFS mode array substrate has: a second insulation layer deposited on a base layer, wherein a first through hole and a second through hole are formed in the second insulation layer; a pixel electrode layer deposited on the second insulation layer, wherein the pixel electrode layer is provided with a plurality of pixel electrodes; and a third insulation layer formed on a source electrode, a drain electrode, the pixel electrodes, and the second insulation layer.

Disclosed are a divisional exposure apparatus which allows for forming a PAC layer uniformly on RGBW subpixels by a single mask process, using divisional exposure, in a large-size liquid crystal display with a COT structure, and a method of manufacturing a liquid crystal display using the same. To this end, the sum of illumination intensities at the center of an overlap region is controlled in the range of 120% to 130%, and gradually increases from 100% at the edge (boundary) of the overlap region. Accordingly, the cell gap between the RGB subpixels and the W subpixel is made uniform, thus preventing the problem of spots.

In a method of manufacturing a display substrate and a method of manufacturing a display panel, the display substrate includes a color filter layer disposed on a base substrate within a pixel area, a first organic insulating pattern disposed on a first boundary area between adjacent pixel areas, a pixel electrode disposed on the color filter layer, and a first blocking pattern disposed on the first organic insulating pattern. Accordingly, an organic insulating layer corresponding to the pixel area is removed so that deterioration of the display quality by impurities generated from the organic insulating layer may be minimized. In addition, a stepped portion of a blocking pattern disposed between a pixel area and a boundary area of a plurality of the pixel areas is reduced so that motion blurring of a liquid crystal may be prevented.

A display device includes: a substrate; a touch electrode disposed on the substrate; a routing wiring disposed on the touch electrode; a light blocking layer disposed on the touch electrode; a semiconductor layer disposed on the light blocking layer; a source electrode and a drain electrode spaced apart from each other and disposed on the semiconductor layer; and a gate electrode disposed on the source electrode and the drain electrode.