The present invention provides a LCOS structure and a method for fabricating same. The LCOS structure includes: a silicon substrate; a liquid crystal layer and a transparent conductive layer both disposed above the silicon substrate. In the silicon substrate, there are formed a conductive pad, an opening where the conductive pad is exposed, and at least one metal layer. The opening is located peripherally around the liquid crystal layer, there is no portion of the metal layer located under the conductive pad. The conductive backing is located at the same vertical level as one metal layer in the at least one metal layer and electrically connected thereto, a conductive adhesive fills in the opening and a gap between the silicon substrate and the transparent conductive layer. The transparent conductive layer is electrically connected to the conductive pad by conductive metal particles in the conductive adhesive.

To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode.

According to one embodiment, a display device includes a first substrate, a second substrate and a liquid crystal layer. The first substrate includes a first insulating substrate, a scanning line, a signal line, a switching, and a pixel electrode. The liquid crystal layer includes a polymer in a shape of a streak and a liquid crystal molecule. The scanning line includes a conductive layer located between the first insulating substrate and the liquid crystal layer, and a first reflective layer located between the first insulating substrate and the conductive layer and having a reflectance higher than a reflectance of the conductive layer.

The present invention provides a display panel and a manufacture method thereof. By locating the matrix electrode corresponding to the black matrix on one side of the color film substrate, which is close to the liquid crystal layer, and because the matrix electrode is coupled to the common electrode signal, no voltage difference exists between the matrix electrode and the common electrode, and no matter in condition of being electrified or not electrified, the liquid crystal layer between the matrix electrode and the common electrode of the array substrate is not orientated and constantly appears in an opaque state so that no interference generates to light between adjacent pixels of the panel to eliminate the large view angle color washout of the panel and to improve the display quality of the LTPS display panel.

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

A thin-film transistor array includes an insulating substrate and pixels each including a thin-film transistor, a pixel electrode, and a capacitor electrode, the pixels being formed in a matrix and located at positions where column wirings extending in a column direction intersect row wirings perpendicular to the column wirings and extending in a row direction. The thin-film transistor includes a gate electrode, a source electrode, a drain electrode, and a semiconductor pattern formed between the source electrode and the drain electrode. The pixel electrode includes two electrically conductive layers which are a lower layer electrode serving as a lower pixel electrode, and an upper layer electrode serving as an upper pixel electrode. The corresponding one of the column wirings is at a position which has no overlap with the capacitor electrode and the lower pixel electrode, and has an overlap with the upper pixel electrode, in the lamination direction.

The semiconductor device comprises a gate electrode, a first gate insulating film overlapping a part of the side surface and the upper surface of the gate electrode, a second gate insulating film overlapping the upper surface of the gate electrode, a semiconductor film provided on the upper surface of the second gate insulating film and overlapping the gate electrode and a first terminal and a second terminal overlapping the upper surface of the semiconductor film. In a plan view, a first region is a region where the semiconductor film overlaps the upper surface of the first gate insulating film and the second gate insulating film between the first terminal and the second terminal, and a third region is a region that overlaps both a part of the upper surface of the gate electrode and the second gate insulating film and does not overlap the first gate insulating film.

A display device includes a base layer, a first pixel transistor, a first gate line, a first data line electrically connected to the first pixel transistor, a first pixel electrode electrically connected to the first pixel transistor and overlapping the first data line in a plan view, and a porous layer. The porous layer is disposed between the first data line and the first pixel electrode and includes a matrix including a polymer resin and a plurality of void portions defined in the matrix. The display device is capable of displaying a sharp image because the porous layer alleviates or prevents a crosstalk between the first data line and the first pixel electrode.

Examples are disclosed that relate to display devices having a common light path region. One example provides a display device comprising a light source configured to emit illumination light along an illumination path, and a spatial light modulator configured to modulate the illumination light and emit the modulated illumination light as image light along an imaging path, wherein at least a portion of the illumination path and at least a portion of the imaging path extend through a common light path region. The display device further comprises one or more optical elements positioned within the common light path region, at least one optical element being configured to guide the illumination light as the illumination light travels through the common light path region toward the spatial light modulator, and shape the image light as the image light travels through the common light path region.

An image projector includes a spatial light modulator (SLM) with a two dimensional array of pixel elements controllable to modulate a property of light transmitted or reflected by the pixel elements. An illumination arrangement delivers illumination to the SLM. A collimating arrangement collimates illumination from the SLM to generate a collimated image directed to an exit stop. The illumination arrangement is configured to sequentially illuminate regions of the SLM, each corresponding to a multiple pixel elements. A controller synchronously controls the pixel elements and the illumination arrangement so as to project a collimated image with pixel intensities corresponding to a digital image.