A method of generating multiple channels of optical pulses comprises: providing a continuous wave optical input having an optical power; dividing the optical power of the optical input into equal consecutive slices in the time domain; and allocating the consecutive slices sequentially to two or more optical outputs such that each output forms a channel of optical pulses of equal pulse repetition rate shifted in time relative to the or each other channel.

In a general aspect, a structured optical beam with position-dependent polarizations is prepared for human observation. In some examples, an optics method includes processing an optical beam to produce a structured optical beam for human observation. Processing the optical beam includes receiving the optical beam from a laser source; attenuating the optical beam to an exposure irradiance level that is safe for direct viewing by a human eye; expanding the optical beam to a size configured for a field of view of the human eye; and preparing the optical beam with a position-dependent polarization profile. The structured optical beam, which has the position-dependent polarization profile, is directed towards an observation region for human observation.

In a system for converting digital data into a modulated optical signal, an electrically controllable device, including a modulator having one or more actuating electrodes, provides an analog-modulated optical signal that is modulated in response to output data bits of a digital-to-digital mapping. A digital-to-digital conversion provides the mapping of input data words to the output data bits. The mapping enables adjustments to correct for non-linearities and other undesirable characteristics, thereby improving signal quality.

In order to provides an optical waveguide element and an optical modulator that can prevent the damage to the substrate and the deterioration of the properties of the substrate that may occur due to the stress, by reducing the influence of stress on the substrate by the buffer layer, the optical waveguide 1 is provided with a substrate 5 having an electro-optical effect; an optical waveguide 10 formed on the substrate 5; a first buffer layer 9a provided on the substrate 5; and a second buffer layer 9b provided under the substrate 5, wherein the first buffer layer 9a and the second buffer layer 9b are composed of substantially the same material and have substantially the same thickness, and the first buffer layer 9a and the second buffer layer 9b are formed to be in contact with an upper surface and lower surface of the substrate 5, respectively.

An optical phase shift circuit can include: a first Mach Zehnder lattice and a second Mach Zehnder lattice. Each Mach Zehnder lattice can have a first waveguide and a second waveguide, with a set of active phase shifters disposed along one of the waveguides and a plurality of directional coupler regions disposed along both waveguides between the active phase shifters. A first passive phase shifter can be coupled between one output path of the first Mach Zehnder lattice and one input path of the second Mach Zehnder lattice, and a second passive phase shifter can be coupled between the other output path of the first Mach Zehnder lattice and the other input path of the second Mach Zehnder lattice. Optical phase shift circuits of this kind can be used to implement phase shifters in a Generalized Mach Zehnder interferometer.

This optical modulator includes an optical modulation element having a first optical waveguide, a second optical waveguide, a first electrode configured to apply an electric field to the first optical waveguide, and a second electrode configured to apply an electric field to the second optical waveguide; and a control unit configured to control an applied voltage between the first electrode and the second electrode. The control unit sets Vpp to 0.06×Vπ≤Vpp≤0.4×Vπ when a half-wavelength voltage of the optical modulation element is Vπ and an applied voltage width that is an amplitude of an applied voltage applied to the optical modulation element is Vpp, and sets Vn≤Vmin≤Vn+0.29×Vπ or Vn−0.29×Vπ≤Vmax≤Vn when a minimum value and a maximum value of a voltage applied to the optical modulation element are respectively Vmin and Vmax and a null point voltage of the optical modulation element is Vn.

A light source unit (1000) of the present disclosure includes a light source part (100), a first electrical signal generating device (40-1) configured to control current that drives an optical semiconductor device (30), an optical modulator (200) having a Mach-Zehnder type optical waveguide (10) and an electrode configured to apply an electric field to the optical waveguide (10), and a second electrical signal generating device (40-2) configured to control a voltage that operates the optical modulator (200), the first electrical signal generating device (40-1) and the second electrical signal generating device (40-2) are synchronizably connected to each other, and intensity of light emitted from the optical modulator (200) is changed by the current controlled by the first electrical signal generating device (40-1) and the voltage controlled by the second electrical signal generating device (40-2).

There is provided an optical communication device having a silicon photonics (SiPh) component configured to perform an optical communication function; a complementary metal oxide semiconductor (CMOS) drive circuit coupled to the SiPh device for operation thereof; and one or more controllably adjustable CMOS impedance circuits coupled to the SiPh component and the electrical drive circuit. In the optical communication device, impedances of each of the CMOS impedance circuits can be adjustable over a respective limited range. The limited range may be designed and configured based at least in part on an anticipated amount of variation in electrical characteristics of the SiPh component, the CMOS electrical drive circuit, or a combination thereof. Such variation may be anticipated due to manufacturing variability.

Provided is an optical phase shifter. The optical phase shifter includes: a slab waveguide in which a first slab region doped into a first conductivity type and a second slab region doped into a second conductivity type are arranged side by side to form a PN junction; and a rib waveguide disposed on the slab waveguide such that one side of the rib waveguide makes contact with the first slab region, and an opposite side of the rib waveguide makes contact with the second slab region, wherein the rib waveguide includes first to third rib waveguide layers that are sequentially stacked, the first and third rib waveguide layers include silicon (Si), and the second rib waveguide layer includes silicon-germanium (SiGe).

Provided is an optical phase shifter. The optical phase shifter includes: a silicon substrate; a cladding layer disposed on the silicon substrate; an intermediate film disposed on the cladding layer; a KTN (KTaNbO.sub.3) waveguide disposed on the intermediate film; a protective layer disposed on the intermediate film to cover the KTN waveguide; and first and second electrodes disposed on the intermediate film while being spaced apart from each other with the KTN waveguide interposed between the first and second electrodes, wherein a silicon waveguide is disposed inside the cladding layer while being spaced apart from the KTN waveguide with the intermediate film interposed between the silicon waveguide and the KTN waveguide.