An active metasurface includes a number of periodically-repeated unit cells arranged on a substrate, each of the unit cells including a high-index dielectric block; a heat source positioned to selectively modulate heat applied to the high-index dielectric block; and an insulating undercut region at an interface between the high-index dielectric block and the substrate.

An active metasurface includes a number of periodically-repeated unit cells arranged on a substrate that each include a plasmonic waveguide shaped and sized to provide a cutoff mode that captures light of a target wavelength. The active metasurface includes an index modulation controller that controllably varies a voltage differential across each one of the periodically-repeated cells to change a phase of light incident on the metasurface.

Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.

A device may include a high-side electrode layer comprising a plurality of discrete electrodes. A device may include a low-side electrode layer. A device may include an electro-optic (EO) layer comprising a solid EO active material at least partially interposed between the high-side electrode layer and the low-side electrode layer, thereby forming a plurality of active cells of the EO layer. A device may include a controller, comprising: a steering request circuit structured to interpret a steering request value, a steering configuration circuit structured to determine a plurality of EO command values in response to the steering request value; and a steering implementation circuit structured to provide a plurality of voltage commands in response to the plurality of EO command values.

According to embodiments of the present invention, an optical device is provided. The optical device includes a waveguide structure including a floating gate, and an optical waveguide arranged spaced apart from the floating gate, wherein the optical waveguide overlaps with the floating gate, a carrier injection portion arranged spaced apart from the floating gate, and an electrode arrangement, wherein, in response to a first voltage difference applied to the electrode arrangement, the optical device is configured to inject charge carriers from the carrier injection portion to the floating gate to cause a change in refractive index of the waveguide structure, and wherein, in response to a second voltage difference applied to the electrode arrangement, the optical device is configured to drive the charge carriers from the floating gate to the optical waveguide to deplete the charge carriers.

An ultralow-energy electro-optical 2×2 cross-bar switch comprises an identical pair of semiconductor nanobeams that are incorporated in the central arms of a waveguided Mach-Zehnder interferometer. Each nanobeam includes a one dimensional “lattice” of holes along the nanobeam axis that defines a resonant cavity whose fundamental mode is the operating wavelength of the switch. A localized, lateral lengthwise extending portion of the semiconductor nanobeam is doped P type, while the other lateral half of the nanobeam wing is doped N type, forming a P-N junction in the body. Application of an electric potential across the P-N junction alters the effective index of refraction of the lengthwise extending portion and controls both the transmission and reflection of an incoming optical signal at the operating wavelength of the switch through the semiconductor nanobeam. Constructive and destructive interference of component signals within the interferometer controls the spatial routing of the incident light.

An example system includes a high-side electrode layer having a first number of electrical members alternated with, and electrically coupled to adjacent ones of a second number of electrical members, where either the first number of electrical members or the second number of electrical members are discrete electrodes, and the other one of the first or second number of electrical members are resistors. Accordingly, the high-side electrode layer is formed from alternating discrete electrodes and resistors. The example system further includes a low-side electrode layer, and an electro-optic (EO) layer having an EO active material at least partially positioned between the high-side electrode layer and the low-side electrode layer, thereby forming a number of active cells of the EO layer.

A temperature compensated carrier effect switching cell controls phase shifts to compensate for phase errors induced by temperature difference between arms of the switching cell. The temperature difference may be generated by driving the carrier effect region of the switching cell. Temperature sensors within the arms of the switching cell provide signals indicative of the temperature difference.

Provided is an optical modulator in which low-voltage drive and a stable modulation characteristic are secured over a wide bandwidth. An optical modulator includes: a substrate 10; an optical waveguide (not shown) formed in the substrate 10; a modulation electrode (a signal electrode 11 and a ground electrode 12) for modulating light waves propagating through the optical waveguide; and an external signal line (not shown, only a connection connector 4 is shown) which is provided outside the substrate and supplies a modulation signal to the modulation electrode, in which an impedance value of the modulation electrode in an active region S in which an electric field formed by the modulation electrode is applied to the optical waveguide is set to be lower than an impedance value of the external signal line, and an impedance adjustment part 21 having an impedance adjustment function with respect to mainly a modulation signal in a low-frequency area and configured of a lumped-constant circuit, and an impedance matching line L having an impedance adjustment function with respect to mainly a modulation signal in a high-frequency area are disposed between the external signal line and the active region of the modulation electrode.

The present invention discloses a TMOS based on slab PhCs with a high DOP and a large EXR, which comprises an upper slab PhC and a lower slab PhC; the upper slab PhC is called as a first square-lattice slab PhC with a TE bandgap, the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single first flat dielectric pillar and a background dielectric, the first flat dielectric pillar includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or a high-refractive-index flat film, or a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, wherein the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, a single second flat dielectric pillar and a background dielectric, and a normalized operating frequency of the TMOS with high DOP and large extinction ratio is 0.252 to 0.267.