An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a first portion having a first width and a second portion having a width different from the first width and located on the first portion. The first portion is located between a first doped region and a second doped region.

A device may include a high-side electrode layer comprising a plurality of discrete electrodes. A device may include a low-side electrode layer. A device may include an electro-optic (EO) layer comprising a solid EO active material at least partially interposed between the high-side electrode layer and the low-side electrode layer, thereby forming a plurality of active cells of the EO layer. A device may include a controller, comprising: a steering request circuit structured to interpret a steering request value, a steering configuration circuit structured to determine a plurality of EO command values in response to the steering request value; and a steering implementation circuit structured to provide a plurality of voltage commands in response to the plurality of EO command values.

One example optical splitter chip includes a substrate. The substrate is configured with an input port, configured to receive first signal light, an uneven optical splitting unit, configured to split the first signal light into at least second signal light and third signal light, where optical power of the second signal light is different from optical power of the third signal light, a first output port, configured to output the second signal light, an even optical splitting unit group, including at least one even optical splitting unit, configured to split the third signal light into at least two channels of equal signal light, where optical power of the at least two channels of equal signal light is the same, and at least two second output ports, which are in a one-to-one correspondence with the at least two channels of equal signal light.

An optical switch is provided which is capable of driving control by the same FPGA and the same driving circuit configuration, and hence is capable of driving at a high speed and a low consumption power. The optical switch of the present disclosure is a 1×N optical switch having a structure in which with respect to an optical switch, a driving circuit of the optical switch is integrated in the vicinity of a control electrode of the optical switch. The optical switch includes a plurality of 2×2 optical switches and N optical gates. Different bias voltages (V.sub.b) are set between the optical switches and the optical gates, and a driver for the 2×2 optical switch of the driving circuit and a driver for the optical gate are of the same circuit form

An example system includes a high-side electrode layer having a first number of electrical members alternated with, and electrically coupled to adjacent ones of a second number of electrical members, where either the first number of electrical members or the second number of electrical members are discrete electrodes, and the other one of the first or second number of electrical members are resistors. Accordingly, the high-side electrode layer is formed from alternating discrete electrodes and resistors. The example system further includes a low-side electrode layer, and an electro-optic (EO) layer having an EO active material at least partially positioned between the high-side electrode layer and the low-side electrode layer, thereby forming a number of active cells of the EO layer.

Monitoring output power levels of a carrier-effect based switching cell allows phase errors resulting from driving a PIN or PN junction of the switching cell to be dynamically compensated for. The compensation may also allow for compensating of phase errors resulting from the phase imbalance of input couplers as well as phase errors from the waveguide due to fabrication variations. By dynamically compensating for phase errors caused by the driving of the PIN or PN junction, the extinction ratio of the carrier-effect based switching cell can be increased.

One example optical splitter chip includes a substrate. The substrate is configured with an input port, configured to receive first signal light, an uneven optical splitting unit, configured to split the first signal light into at least second signal light and third signal light, where optical power of the second signal light is different from optical power of the third signal light, a first output port, configured to output the second signal light, an even optical splitting unit group, including at least one even optical splitting unit, configured to split the third signal light into at least two channels of equal signal light, where optical power of the at least two channels of equal signal light is the same, and at least two second output ports, which are in a one-to-one correspondence with the at least two channels of equal signal light.

An example deformable mirror includes a number of cells defining an aperture plane of the mirror. Each of the cells includes a first transparent electrode layer and a second reflective electrode layer, with a solid crystal electro-optical (EO) active layer between the electrode layers. The deformable mirror includes a reflective layer optically coupled to each of the cells on the reflective side of the cell.

The present disclosure relates to a single OPA (optical phased array) device including a light source; a waveguide which extends from the light source to allow light incident from the light source to pass through; a plurality of modulators which is disposed in the waveguide to modulate a phase of light in the waveguide; a two-dimensional material layer which passes or absorbs light incident from the light source; and an electrode which supplies charges to the two-dimensional material layer, in which the light incident from the light source passes through the two-dimensional material layer, the waveguide, and the modulator and is reflected by an external target of the single OPA device to pass through the modulator and the waveguide, and then absorbed by the two-dimensional material layer.

An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a portion of a first doped region doped with dopants of a first type and a portion of a second doped region doped with dopants of a second type that is different from the dopants of the first type.