A display substrate includes: a first base substrate (20), and gate lines (4) and data lines (5) on the first base substrate (20). The gate lines (4) extend in a first direction (X), and the data lines (5) extend in a second direction (Y). The gate lines (4) and the data lines (5) define pixel units, each of which includes a thin film transistor (7), a pixel electrode (8) and a common electrode (9). At least some of the pixel units are respectively configured with conductive bridge lines (10) provided in the same layer as the pixel electrode (8). In a pixel unit configured with the conductive bridge line (10), a first hollowed-out structure (13) and a second hollowed-out structure (14) are provided on opposite sides of the pixel electrode (8) in the first direction, to weaken or even eliminate mura (e.g., nonuniformity in brightness or color).

The present invention relates to a device and a method for limiting the output of a laser, wherein a reflecting device arranged in the optical path of a laser beam comprises a switching layer which comprises or consists of a material exhibiting a metal-insulator transition and a reflecting layer which is positioned downstream of the switching layer in the optical path of the laser beam, wherein the reflecting device is configured such that an output of the laser beam when it is incident upon the reflecting device which exceeds a predefined threshold causes a change in the refractive index of the material in the switching layer, and the output of the laser beam reflected by the reflecting device is thus reduced as compared to the output of the laser beam when it is incident upon the reflecting device due to reduced reflection by the reflecting device.

An apparatus including an optical resonator, and a method of using same. The optical limiter includes an optically absorbent material. The optical resonator supports a plurality of resonant transmission peaks at resonant frequencies defined by the cavity length. The optically absorbent material exhibits a saturable absorption response at a fundamental absorption peak located spectrally at a fundamental absorption peak frequency of the plurality of resonant transmission peaks. The optically absorbent material includes an absorptivity sufficient for strong cavity coupling, such that the fundamental absorption peak splits into a first upper vibration polariton transmission peak and a second lower polariton transmission peak separated by a Rabi splitting. The Rabi splitting is proportional to a square root of the absorptivity. The absorptivity varies with optical excitation of the optically absorbent material. The absorptivity is maximized at a photon-unsaturated ground state, and the absorptivity is minimized at an optically excited state.

A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

An anti-dazzle imaging camera is provided that includes a photorefractive crystal that is wavelength-agnostic. The photorefractive crystal is configured to receive an optical beam. When the optical beam includes no laser, the photorefractive crystal is configured to pass the optical beam unchanged to an imaging detector. When the optical beam includes a laser, the photorefractive crystal is configured to attenuate the laser to generate a modified optical beam and to pass the modified optical beam to the imaging detector.

A transparent display provides eye protection from lasers and other high intensity light sources. The transparent display allows users to view objects clearly through the display while also presenting text, graphics or video on the display surface. Simultaneously, the display assembly comprises a component that provides eye protection against high power radiation sources. The transparent display with eye protection provides both protection from high power light sources and an additional cockpit display surface for presentation of information including graphical images, symbology, video, text, and other data.

Systems and methods for preventing high-radiant-flux light, such as laser light or a nuclear flash, from causing harm to imaging devices, such as a camera or telescope. In response to detection of high-radiant-flux light, the proposed systems have the feature in common that a shutter is closed sufficiently fast that light from the source will be blocked from reaching the image sensor of the imaging device. Some of the proposed systems include a folded optical path to increase the allowable reaction time to close the shutter.

According to some aspects, a transmissive and all-dielectric optical component/limiter with great cutoff efficiency using Vanadium Dioxide (VO.sub.2) as the active component is disclosed. In some embodiments, Vanadium dioxide is used for an optical limiter due to the large contrast in optical constants upon undergoing the semiconductor to metal phase transition. When triggered optically, this transition occurs within 60 fs, making the device suitable for an ultrafast laser environment. In addition, the phase transition threshold is tunable by applying stress or doping; therefore, the device cutoff intensity can be adjusted to fulfill specific requirements.

Various techniques provide systems and methods for facilitating aperture protection. In one example, a system for facilitating aperture protection is provided. The system includes an optical limiter device. The optical limiter device includes a thermochromic material and a plurality of nanostructures, where each of the nanostructures is in contact with a portion of the thermochromic material. At least a subset of the nanostructures is configured to receive incident light and generate heat in response to the incident light. At least a portion of the thermochromic material is configured to transition from a first state to a second state in response to the heat and block the incident light when the portion is in the second state. The portion is configured to transition from the second state back to the first state when the portion cools, such as upon removal of the incident light. Related methods and products are also provided.

A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.