G03C1/8155

Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): ##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD
20170144954 · 2017-05-25 ·

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1):

##STR00001##

wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.