A lithography process is described by a design for a lithographic mask and a description of the lithography configuration, which may include the lithography source, collection/illumination optics, projection optics, resist, and/or subsequent fabrication steps. The actual lithography process uses a lithographic mask fabricated from the mask design, which may be different than the nominal mask design. A mask fabrication model models the process for fabricating the lithographic mask from the mask design. Typically, this is an electron-beam (e-beam) process, which includes e-beam exposure of resist on a mask blank, processing of the exposed resist to form patterned resist, and etching of the mask blank with the patterned resist. The mask fabrication model, usually in conjunction with other process models, is used to estimate a result of the lithography process. Mask correction is then applied to the mask design based on the simulation result.

A lithography process is described by a design for a lithographic mask and a description of the lithography configuration, which may include the lithography source, collection/illumination optics, projection optics, resist, and/or subsequent fabrication steps. The actual lithography process uses a lithographic mask fabricated from the mask design, which may be different than the nominal mask design. A mask fabrication model models the process for fabricating the lithographic mask from the mask design. Typically, this is an electron-beam (e-beam) process, which includes e-beam exposure of resist on a mask blank, processing of the exposed resist to form patterned resist, and etching of the mask blank with the patterned resist. The mask fabrication model, usually in conjunction with other process models, is used to estimate a result of the lithography process. Mask correction is then applied to the mask design based on the simulation result.

An electronic device includes a first integrated circuit (IC) die and a second IC die. The first IC die includes a first set of contact pads arranged in a first geometrical pattern on a first surface of the first IC die, the second IC die includes a second set of the contact pads that are arranged, on a second surface of the second IC die, in a second geometrical pattern that is a mirror image of the first geometrical pattern. The second surface of the second IC die is facing the first surface of the first IC die, and the contact pads of the first and second sets are aligned with one another and mounted on one another.

An electronic device includes a first integrated circuit (IC) die and a second IC die. The first IC die includes a first set of contact pads arranged in a first geometrical pattern on a first surface of the first IC die, the second IC die includes a second set of the contact pads that are arranged, on a second surface of the second IC die, in a second geometrical pattern that is a mirror image of the first geometrical pattern. The second surface of the second IC die is facing the first surface of the first IC die, and the contact pads of the first and second sets are aligned with one another and mounted on one another.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Method (and apparatus) for producing a 3D target structure in lithographic material. Focus region of a laser writing beam travels through a scanning manifold through the lithographic material. In the focus region of the laser writing beam, an exposure dose is irradiated into the lithographic material, and a structure region is locally defined. At least one exposure data set which represents a local exposure dose for the scan manifold as a function of location is determined. A structure which approximates the target structure is defined based on at least one exposure data set. This structure is analyzed and at least one analysis data set which represents the analyzed structure is determined. Deviation data set which represents deviations of the already defined structure from the target structure is determined. At least one correction exposure data set is determined. Correction structure based on the at least one correction exposure data set is defined.

Method (and apparatus) for producing a 3D target structure in lithographic material. Focus region of a laser writing beam travels through a scanning manifold through the lithographic material. In the focus region of the laser writing beam, an exposure dose is irradiated into the lithographic material, and a structure region is locally defined. At least one exposure data set which represents a local exposure dose for the scan manifold as a function of location is determined. A structure which approximates the target structure is defined based on at least one exposure data set. This structure is analyzed and at least one analysis data set which represents the analyzed structure is determined. Deviation data set which represents deviations of the already defined structure from the target structure is determined. At least one correction exposure data set is determined. Correction structure based on the at least one correction exposure data set is defined.

A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.

A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.