Provided is a reflective mask blank which includes an absorber film.

The reflective mask blank of the present invention is a reflective mask blank including a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate, in which the thin film contains tin, tantalum, niobium, and oxygen, and the oxygen deficiency rate of the thin film is 0.15 or more and 0.28 or less.

Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.

A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

The present invention provides: a pellicle frame for EUV exposure characterized in that the pellicle frame is provided with at least one ventilation part, and a filter having a porous membrane coated with a resin is attached inside the ventilation part; a pellicle characterized in that a pellicle film is stretched on the pellicle frame; a pellicle-attached exposure original plate for EUV exposure characterized in that the pellicle is attached to the exposure original plate; a method for manufacturing a semiconductor; a method for manufacturing a liquid crystal display plate; and an exposure method. The pellicle frame of the present invention is sufficiently resistant to hydrogen radicals during EUV exposure.

The present invention provides: a pellicle frame for EUV exposure characterized in that the pellicle frame is provided with at least one ventilation part, and a filter having a porous membrane coated with a resin is attached inside the ventilation part; a pellicle characterized in that a pellicle film is stretched on the pellicle frame; a pellicle-attached exposure original plate for EUV exposure characterized in that the pellicle is attached to the exposure original plate; a method for manufacturing a semiconductor; a method for manufacturing a liquid crystal display plate; and an exposure method. The pellicle frame of the present invention is sufficiently resistant to hydrogen radicals during EUV exposure.

An extreme ultra-violet (EUV) lithography process includes lithographically patterning first through fourth photoresist regions on respective first through fourth regions of a semiconductor substrate, in sequence, using a mask. This mask includes a main area in which a main pattern is defined, a first dummy area in which a first dummy pattern is defined, a second dummy area in which a plurality of second sub-dummy patterns are defined at corresponding corners of the mask, and an alignment area including an alignment pattern therein that is spaced farther from a center of the main area relative to the first and second dummy areas. During the lithographically patterning, at least part of the alignment area on the first region of the substrate is exposed at least three times to EUV light, using the mask.

An extreme ultra-violet (EUV) lithography process includes lithographically patterning first through fourth photoresist regions on respective first through fourth regions of a semiconductor substrate, in sequence, using a mask. This mask includes a main area in which a main pattern is defined, a first dummy area in which a first dummy pattern is defined, a second dummy area in which a plurality of second sub-dummy patterns are defined at corresponding corners of the mask, and an alignment area including an alignment pattern therein that is spaced farther from a center of the main area relative to the first and second dummy areas. During the lithographically patterning, at least part of the alignment area on the first region of the substrate is exposed at least three times to EUV light, using the mask.