There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

Provided is a reflective mask blank comprising a phase shift film having a small change in the phase difference and/or reflectance of the phase shift film even in a case where the film thickness of the phase shift film changes.

A reflective mask blank comprises a multilayer reflective film and a phase shift film in this order on a main surface of a substrate. The phase shift film comprises a lower layer and an uppermost layer. The lower layer is located between the uppermost layer and the multilayer reflective film. The lower layer is formed of a material in which the total content of ruthenium and chromium is 90 atomic % or more, or a material in which the total content of ruthenium, chromium, and nitrogen is 90 atomic % or more. The uppermost layer is formed of a material in which the total content of ruthenium, chromium, and oxygen is 90 atomic % or more.

A lithography mask including a substrate, a phase shift layer on the substrate and an etch stop layer is provided. The phase shift layer is patterned and the substrate is protected from etching by the etch stop layer. The etch stop layer can be a material that is semi-transmissive to light used in photolithography processes or it can be transmissive to light used in photolithography processes.

The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8.

Rd=er.sub.2/er.sub.1  [Equation 1]

In the Equation 1, the er.sub.1 value is an etching rate of the first light shielding layer measured by etching with argon gas.

The er.sub.2 value is an etching rate of the second light shielding layer measured by etching with argon gas.

In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.

The present disclosure relates to a blank mask and the like, and comprises a transparent substrate and a light shielding film disposed on the transparent substrate. The light shielding film comprises a transition metal and at least any one between oxygen and nitrogen. The light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer. The light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8.

Rd=er.sub.2/er.sub.1  [Equation 1]

In the Equation 1, the er.sub.1 value is an etching rate of the first light shielding layer measured by etching with argon gas.

The er.sub.2 value is an etching rate of the second light shielding layer measured by etching with argon gas.

In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.

A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.

A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.

A phase shift mask suitable for forming a via pattern on a transferred object is provided. The phase shift mask has a first pattern region and a second pattern region. The phase shift mask includes a substrate and a phase shift pattern layer. The phase shift pattern layer is located on the substrate and is disposed corresponding to one of the first pattern region and the second pattern region. An optical phase difference corresponding to the first pattern region and the second pattern region is basically 180 degrees. The first pattern region has a via region away from the second pattern region. The second pattern region includes a plurality of strip patterns surrounding the via region.

The present disclosure relates to a blank mask including: a transparent substrate; and

a light shielding film disposed on the transparent substrate, wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a Mtr value of Equation 1 below of a surface of the light shielding film is 6 or less:

Mtr=|Rsk|*Rku   [Equation 1]

where, in the Equation 1, |Rsk| is an absolute value of an Rsk value, which is a height skewness of the surface of the light shielding film, and Rku is kurtosis of the surface of the light shielding film.

The present disclosure relates to a blank mask including: a transparent substrate; and

a light shielding film disposed on the transparent substrate, wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a Mtr value of Equation 1 below of a surface of the light shielding film is 6 or less:

Mtr=|Rsk|*Rku   [Equation 1]

where, in the Equation 1, |Rsk| is an absolute value of an Rsk value, which is a height skewness of the surface of the light shielding film, and Rku is kurtosis of the surface of the light shielding film.