A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

A blank mask includes a transparent substrate and a light shielding film disposed on the transparent substrate. A surface of the light shielding film has a controlled power spectrum density value at a spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. The surface of the light shielding film has a controlled minimum power spectrum density value at the spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. An Rq value of the surface of the light shielding film is 0.25 nm to 0.55 nm.

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern disposed within a first region from a top view perspective and extending along a first direction, a first phase shift circuit disposed within the first region, a first transmission circuit disposed within a second region from the top view perspective, and a first gate conductor extending from the first region to the second region along a second direction perpendicular to the first direction. The first phase shift circuit and the first transmission circuit are electrically connected with the first conductive pattern through the first gate conductor.

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1:

SA1=γ.sub.SL×tan θ  [Equation 1-1]

where, in the Equation 1-1, the γ.sub.SL is an interfacial energy between the light shielding film and a pure water and θ is a contact angle of the light shielding film measured with the pure water, is disclosed.

A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1:

SA1=γ.sub.SL×tan θ  [Equation 1-1]

where, in the Equation 1-1, the γ.sub.SL is an interfacial energy between the light shielding film and a pure water and θ is a contact angle of the light shielding film measured with the pure water, is disclosed.