The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

A reticle, a reticle container and a method of lithography process are provided. The reticle container includes: a cover configured to protect a reticle, a baseplate, and a discharging device on the baseplate. The baseplate has: a top surface configured to engage to the cover and a bottom surface opposite to the top surface. The discharging device is configured to neutralize static charges accumulated on the reticle.

A reticle, a reticle container and a method of lithography process are provided. The reticle container includes: a cover configured to protect a reticle, a baseplate, and a discharging device on the baseplate. The baseplate has: a top surface configured to engage to the cover and a bottom surface opposite to the top surface. The discharging device is configured to neutralize static charges accumulated on the reticle.

A photomask, a method of manufacturing an array substrate, and a display panel are provided. The photomask includes a photomask line of a first conductive portion, a photomask line of a second conductive portion spaced apart from the photomask line of the first conductive portion, and a bridging line. Two opposite ends of the bridging line are respectively connected to the photomask line of the first conductive portion and the photomask line of the second conductive portion, and a width of the bridging line is less than a preset width.

A photomask, a method of manufacturing an array substrate, and a display panel are provided. The photomask includes a photomask line of a first conductive portion, a photomask line of a second conductive portion spaced apart from the photomask line of the first conductive portion, and a bridging line. Two opposite ends of the bridging line are respectively connected to the photomask line of the first conductive portion and the photomask line of the second conductive portion, and a width of the bridging line is less than a preset width.

The present invention provides a photomask including a substrate, a circuit pattern on the substrate, an electrostatic discharge (ESD) ring on the substrate and an ESD line on the substrate. The ESD structure surrounds the circuit pattern. The ESD line extends between an edge of the substrate and the ESD structure, in which the ESD line includes an edge portion extending beyond an end of an edge of the ESD structure, and the edge portion of the ESD line includes at least one comb-shaped structure.

The present invention provides a photomask including a substrate, a circuit pattern on the substrate, an electrostatic discharge (ESD) ring on the substrate and an ESD line on the substrate. The ESD structure surrounds the circuit pattern. The ESD line extends between an edge of the substrate and the ESD structure, in which the ESD line includes an edge portion extending beyond an end of an edge of the ESD structure, and the edge portion of the ESD line includes at least one comb-shaped structure.

The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp.sup.2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp.sup.2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp.sup.2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.

The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp.sup.2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp.sup.2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp.sup.2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.

A substrate with a film for a reflective mask blank including a substrate, a multilayer reflection film and a back surface conductive film having a composition at the side in contact with the substrate and a different composition at the side remotest from the substrate is provided. The composition at the side in contact with the substrate contains silicon and nitrogen, as main components, and the different composition at the side remotest from the substrate contains tantalum, as a main component, and at least one element selected from the group consisting of silicon, germanium and aluminum.