G03F1/46

Method of accelerated hazing of mask assembly

A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

Method of accelerated hazing of mask assembly

A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

OPTICAL LITHOGRAPHY SYSTEM AND METHOD OF USING THE SAME
20230011701 · 2023-01-12 ·

In an embodiment, an apparatus includes an energy source, a support platform for holding a wafer, an optical path extending from the energy source to the support platform, and a photomask aligned such that a patterned major surface of the photomask is parallel to the force of gravity, where the optical path passes through the photomask, where the patterned major surface of the photomask is perpendicular to a topmost surface of the support platform.

OPTICAL LITHOGRAPHY SYSTEM AND METHOD OF USING THE SAME
20230011701 · 2023-01-12 ·

In an embodiment, an apparatus includes an energy source, a support platform for holding a wafer, an optical path extending from the energy source to the support platform, and a photomask aligned such that a patterned major surface of the photomask is parallel to the force of gravity, where the optical path passes through the photomask, where the patterned major surface of the photomask is perpendicular to a topmost surface of the support platform.

BLANK MASK AND PHOTOMASK USING THE SAME

A blank mask includes a transparent substrate and a light shielding film disposed on the transparent substrate. A surface of the light shielding film has a controlled power spectrum density value at a spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. The surface of the light shielding film has a controlled minimum power spectrum density value at the spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. An Rq value of the surface of the light shielding film is 0.25 nm to 0.55 nm.

EUV photo masks and manufacturing method thereof

A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.

Photomask with enhanced contamination control and method of forming the same

A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

A METHOD OF MANUFACTURING SEGREGATED LAYERS ABOVE A SUBSTRATE, AND A METHOD FOR MANUFACTURING A DEVICE

The present invention pertains to a method of manufacturing segregated layers above a substrate. The invention also pertains to methods of manufacturing a photoresist layer, photoresist patterns, a processed substrate and a device.

A METHOD OF MANUFACTURING SEGREGATED LAYERS ABOVE A SUBSTRATE, AND A METHOD FOR MANUFACTURING A DEVICE

The present invention pertains to a method of manufacturing segregated layers above a substrate. The invention also pertains to methods of manufacturing a photoresist layer, photoresist patterns, a processed substrate and a device.

OPTICAL LITHOGRAPHY SYSTEM AND METHOD OF USING THE SAME
20230109913 · 2023-04-13 ·

In an embodiment, an apparatus includes an energy source, a support platform for holding a wafer, an optical path extending from the energy source to the support platform, and a photomask aligned such that a patterned major surface of the photomask is parallel to the force of gravity, where the optical path passes through the photomask, where the patterned major surface of the photomask is perpendicular to a topmost surface of the support platform.