Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.

Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.

The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

A method for lithographically patterning a photoresist is provided. The method includes receiving a wafer with the photoresist and exposing the photoresist using an extreme ultraviolet (EUV) radiation reflected by an EUV mask. The EUV mask includes a substrate, a reflective multilayer stack on the substrate, a capping layer on the reflective multilayer stack, a patterned absorber layer on the capping layer. The patterned absorber layer includes a matrix metal and an interstitial element occupying interstitial sites of the matrix metal, and a size ratio of the interstitial element to the matrix metal is from about 0.41 to about 0.59.

A blank mask includes a transparent substrate and a light shielding film disposed on the transparent substrate. A surface of the light shielding film has a controlled power spectrum density value at a spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. The surface of the light shielding film has a controlled minimum power spectrum density value at the spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. An Rq value of the surface of the light shielding film is 0.25 nm to 0.55 nm.

A blank mask includes a transparent substrate and a light shielding film disposed on the transparent substrate. A surface of the light shielding film has a controlled power spectrum density value at a spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. The surface of the light shielding film has a controlled minimum power spectrum density value at the spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1. An Rq value of the surface of the light shielding film is 0.25 nm to 0.55 nm.

A photomask mask assembly includes a reflective photomask and a protection structure. The reflective photomask includes a substrate and a reflective multilayer on a first substrate surface of the substrate at a front side of the reflective photomask. The protection structure is on a second substrate surface of the substrate at a backside of the reflective photomask, and is detachable from the reflective photomask at a temperature below 150 degree Celsius.