The invention provides a manufacturing method of color resist layer to manufacture the color resist layer by micro transfer printing (MTP), comprising forming a color resist thin film on a first substrate, using a MTP transfer stamp to adsorb a part of the color resist thin film to the plurality of protrusions of the MTP transfer stamp, and transferring the color resist thin film adsorbed by the plurality of protrusions of the MTP transfer stamp to the second substrate to form the color resist layer on the second substrate. The method uses the protrusions of the MTP transfer stamp to form the pattern to control the pattern of the color resist layer instead of exposure and development. No color resist material is wasted, the cost is reduced and the process is simple and widely applicable.

An imageable material can be used to form a mask element that in turn is useful for providing relief images such as in flexographic printing plates. The imageable material has, in order: (a) a transparent polymeric carrier sheet; (b) a non-ablatable light-to-heat converting having an average dry thickness of 1-5 m and comprising: (i) an infrared radiation absorbing material at 0.1-5 weight %; (ii) a thermally crosslinked organic polymeric binder material; and (iii) non-thermally ablatable particles having an average particle size of 0.1-20 m in an amount of 0.2-10 weight %; and (c) a non-silver halide thermally-ablatable imaging layer (IL) disposed on the LTHC layer, the IL comprising a second infrared radiation absorbing material and a UV-light absorbing material dispersed within one or more thermally-ablatable polymeric binder materials.

An imageable material can be used to form a mask element that in turn is useful for providing relief images such as in flexographic printing plates. The imageable material has, in order: (a) a transparent polymeric carrier sheet; (b) a non-ablatable light-to-heat converting having an average dry thickness of 1-5 m and comprising: (i) an infrared radiation absorbing material at 0.1-5 weight %; (ii) a thermally crosslinked organic polymeric binder material; and (iii) non-thermally ablatable particles having an average particle size of 0.1-20 m in an amount of 0.2-10 weight %; and (c) a non-silver halide thermally-ablatable imaging layer (IL) disposed on the LTHC layer, the IL comprising a second infrared radiation absorbing material and a UV-light absorbing material dispersed within one or more thermally-ablatable polymeric binder materials.

A scanning exposure device includes a stage that supports a substrate, wherein a space is provided between a stage surface and the substrate; a light source unit that radiates light to a light irradiation area that extends in one direction above the substrate; and a scanning device that moves one or both of the stage and the light source unit relatively in a scanning direction that intersects the one direction. The scanning device is provided with an acceleration zone from a position in which the stage and the light source unit are at a standstill to a position in which the substrate supported by the stage enters the light irradiation area. The stage comprises a light shielding member that covers the space between the stage surface and the substrate at an end part of the stage.

A scanning exposure device includes a stage that supports a substrate, wherein a space is provided between a stage surface and the substrate; a light source unit that radiates light to a light irradiation area that extends in one direction above the substrate; and a scanning device that moves one or both of the stage and the light source unit relatively in a scanning direction that intersects the one direction. The scanning device is provided with an acceleration zone from a position in which the stage and the light source unit are at a standstill to a position in which the substrate supported by the stage enters the light irradiation area. The stage comprises a light shielding member that covers the space between the stage surface and the substrate at an end part of the stage.

An imageable material can be used to form a mask element that in turn is useful for providing relief images such as in flexographic printing plates. The imageable material has, in order: (a) a transparent polymeric carrier sheet; (b) a non-ablatable light-to-heat converting having an average dry thickness of 1-5 m and comprising: (i) an infrared radiation absorbing material at 0.1-5 weight %; (ii) a thermally crosslinked organic polymeric binder material; and (iii) non-thermally ablatable particles having an average particle size of 0.1-20 m in an amount of 0.2-10 weight %; and (c) a non-silver halide thermally-ablatable imaging layer (IL) disposed on the LTHC layer, the IL comprising a second infrared radiation absorbing material and a UV-light absorbing material dispersed within one or more thermally-ablatable polymeric binder materials.

An imageable material can be used to form a mask element that in turn is useful for providing relief images such as in flexographic printing plates. The imageable material has, in order: (a) a transparent polymeric carrier sheet; (b) a non-ablatable light-to-heat converting having an average dry thickness of 1-5 m and comprising: (i) an infrared radiation absorbing material at 0.1-5 weight %; (ii) a thermally crosslinked organic polymeric binder material; and (iii) non-thermally ablatable particles having an average particle size of 0.1-20 m in an amount of 0.2-10 weight %; and (c) a non-silver halide thermally-ablatable imaging layer (IL) disposed on the LTHC layer, the IL comprising a second infrared radiation absorbing material and a UV-light absorbing material dispersed within one or more thermally-ablatable polymeric binder materials.

The semiconductor structure includes a first conductive path including first and second segments. The first segment is in a first conductive layer. The second segment is in a second conductive layer. The first and second segments are electrically connected. The semiconductor structure includes a second conductive path including third and fourth segments. The third segment is in the first conductive layer. The fourth segment is in the second conductive layer. The third and fourth segments are electrically connected. The semiconductor structure includes a third conductive path between the first conductive path and the second conductive path, the third conductive path includes fifth and sixth segments. The fifth segment is in the second conductive layer. The sixth segment is in the first conductive layer. The fifth and sixth segments are electrically connected. An area of the first conductive layer between the first and third segments is free of the sixth segment.

The invention provides a manufacturing method of color resist layer to manufacture the color resist layer by micro transfer printing (MTP), comprising forming a color resist thin film on a first substrate, using a MTP transfer stamp to adsorb a part of the color resist thin film to the plurality of protrusions of the MTP transfer stamp, and transferring the color resist thin film adsorbed by the plurality of protrusions of the MTP transfer stamp to the second substrate to form the color resist layer on the second substrate. The method uses the protrusions of the MTP transfer stamp to form the pattern to control the pattern of the color resist layer instead of exposure and development. No color resist material is wasted, the cost is reduced and the process is simple and widely applicable.

A scanning exposure device includes a stage that supports a substrate, wherein a space is provided between a stage surface and the substrate; a light source unit that radiates light to a light irradiation area that extends in one direction above the substrate; and a scanning device that moves one or both of the stage and the light source unit relatively in a scanning direction that intersects the one direction. The scanning device is provided with an acceleration zone from a position in which the stage and the light source unit are at a standstill to a position in which the substrate supported by the stage enters the light irradiation area. The stage comprises a light shielding member that covers the space between the stage surface and the substrate at an end part of the stage.