A substrate processing apparatus includes a holder configured to hold, within a processing container, a substrate having a pattern formed of a resist material for EUV lithography on a surface thereof, a rotation driving part configured to rotate the holder, and a light source part including a plurality of light sources configured to emit light to the surface of the substrate held by the holder rotated by the rotation driving part such that a number of rotations of the substrate is 0.5 rpm to 3 rpm.

A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, ##STR00001## in Formula (1), Z represents a halogen atom, a group represented by R.sub.11OCH.sub.2—, or a group represented by R.sub.12OC(═O)CH.sub.2—. R.sub.11 and R.sub.12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

Post exposure bake methods are provided. In one example, a method includes placing a workpiece having a photoresist layer on a workpiece support disposed in a processing chamber. The method includes exposing the photoresist to photons of a wavelength through a photomask. The method includes performing a post exposure bake heating process on the workpiece with the photoresist heating layer. The post exposure bake heating process can include heating the workpiece with both a radiant heat source and a second heat source disposed in the workpiece support until a temperature of the workpiece reaches a post exposure bake setpoint temperature.

A method of operating a semiconductor apparatus includes generating an electric field in peripheral areas of a first covering structure and a second covering structure; causing a photomask to move to a position between the first and second covering structures such that the photomask at least partially vertically overlaps the first and second covering structures and such that particles attached to the photomask are attracted to the first and second covering structures by the electric field; and irradiating the photomask with light through light transmission regions of the first and second covering structures.

An immersion lithographic apparatus is provided having a substrate table including a drain configured to receive immersion fluid which leaks into a gap between an edge of a substrate on the substrate table and an edge of a recess in which the substrate is located. A thermal conditioning system is provided to thermally condition at least the portion of the recess supporting the substrate by directing one or more jets of fluid onto a reverse side of the section supporting the substrate.

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, ##STR00001## noting that in the general formula (1B), when W.sub.1 represents ##STR00002##  R.sub.1 does not represent any of ##STR00003##

An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

A photoresist film is patterned into an array of island shapes with improved critical dimension uniformity and no phase edges by using two alternating phase shifting masks (AltPSMs) and one post expose bake (PEB). The photoresist layer is exposed with a first AltPSM having a line/space (L/S) pattern where light through alternating clear regions on each side of an opaque line is 180° phase shifted. Thereafter, there is a second exposure with a second AltPSM having a L/S pattern where opaque lines are aligned orthogonal to the lengthwise dimension of opaque lines in the first exposure, and with alternating 0° and 180° clear regions. Then, a PEB and subsequent development process are used to form an array of island shapes. The double exposure method enables smaller island shapes than conventional photolithography and uses relatively simple AltPSM designs that are easier to implement in production than other optical enhancement techniques.

An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.