A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Systems and methods for custom photolithography masking via a precision dispense apparatus and process are disclosed. Methods include creating a toolpath instruction for depositing opaque onto a substrate, programming a precision dispense apparatus to execute the created toolpath instruction, and causing the precision dispense tool to deposit opaque material onto the substrate to form the photomask. The substrate may be an optically transparent plate or film or may be an electronic substrate where the opaque material is deposited directly onto a photoresist coating. Capabilities of the systems and methods disclosed herein extend to 3D substrates and custom photolithography masking, among others.

Systems and methods for custom photolithography masking via a precision dispense apparatus and process are disclosed. Methods include creating a toolpath instruction for depositing opaque onto a substrate, programming a precision dispense apparatus to execute the created toolpath instruction, and causing the precision dispense tool to deposit opaque material onto the substrate to form the photomask. The substrate may be an optically transparent plate or film or may be an electronic substrate where the opaque material is deposited directly onto a photoresist coating. Capabilities of the systems and methods disclosed herein extend to 3D substrates and custom photolithography masking, among others.

The present disclosure relates to a method for selecting a photosensitive resin composition, the method including: exposing a resin film of a photosensitive resin composition at 100 to 2000 mJ/cm.sup.2 and heat-treating the resin film at 150° C. to 250° C. for 1 to 3 hours under nitrogen to produce a strip sample of a cured film having a film thickness of 10 μm and a width of 10 mm; performing a fatigue test of repeatedly pulling the strip sample under condition (1) in which the set temperature is 25° C., the distance between chucks is 20 mm, the testing rate is 5 mm/min, and the cyclic load stress is 100 MPa, or under condition (2) in which the set temperature is −55° C., the distance between chucks is 20 mm, the testing rate is 5 mm/min, and the cyclic load stress is 120 MPa; and selecting a photosensitive resin composition satisfying the following condition: the number of times of pulling required until the strip sample breaks in the fatigue test is 100 or more cycles.

The present disclosure relates to a method for selecting a photosensitive resin composition, the method including: exposing a resin film of a photosensitive resin composition at 100 to 2000 mJ/cm.sup.2 and heat-treating the resin film at 150° C. to 250° C. for 1 to 3 hours under nitrogen to produce a strip sample of a cured film having a film thickness of 10 μm and a width of 10 mm; performing a fatigue test of repeatedly pulling the strip sample under condition (1) in which the set temperature is 25° C., the distance between chucks is 20 mm, the testing rate is 5 mm/min, and the cyclic load stress is 100 MPa, or under condition (2) in which the set temperature is −55° C., the distance between chucks is 20 mm, the testing rate is 5 mm/min, and the cyclic load stress is 120 MPa; and selecting a photosensitive resin composition satisfying the following condition: the number of times of pulling required until the strip sample breaks in the fatigue test is 100 or more cycles.

A positive photosensitive resin composition and, more specifically, a positive photosensitive resin composition includes an alkali-soluble polymer resin comprising a polyimide precursor comprising a specific chemical structure; a quinone diazide compound; and a solvent. The positive photosensitive resin composition is a suitable matter for next-generation flexible displays and semiconductor packages.

Embodiments of the present invention provide a roll-to-roll exposure system having a reference mark array and alignment scope units for precisely measuring the position and orientation of an object on a flexible multilayered circuit film. A roll-to-roll exposure system according to an exemplary embodiment of the present invention includes: a plurality of rolls configured to move a flexible multilayered circuit film having an object positioned thereon; alignment scope units positioned so as to be spaced apart from each other and proximate to the rolls; and at least one exposure unit positioned so as to be spaced proximate to the rolls and spaced apart from sides of the alignment scope units, in which one of the rolls has a reference mark array on its surface.

Embodiments of the present invention provide a roll-to-roll exposure system having a reference mark array and alignment scope units for precisely measuring the position and orientation of an object on a flexible multilayered circuit film. A roll-to-roll exposure system according to an exemplary embodiment of the present invention includes: a plurality of rolls configured to move a flexible multilayered circuit film having an object positioned thereon; alignment scope units positioned so as to be spaced apart from each other and proximate to the rolls; and at least one exposure unit positioned so as to be spaced proximate to the rolls and spaced apart from sides of the alignment scope units, in which one of the rolls has a reference mark array on its surface.

Methods of micro- and nano-patterning substrates to form transparent conductive electrode structures or polarizers by continuous near-field optical nanolithography methods using a roll-type photomask or phase-shift mask are provided. In such methods, a near-field optical nanolithography technique uses a phase-shift or photo-mask roller that comprises a rigid patterned externally exposed surface that transfers a pattern to an underlying substrate. The roller device may have an internally disposed radiation source that generates radiation that passes through the rigid patterned surface to the substrate during the patterning process. Sub-wavelength resolution is achieved using near-field exposure of photoresist material through the cylindrical rigid phase-mask, allowing dynamic and high throughput continuous patterning.