G03F7/265

VAPOR PHASE THERMAL ETCH SOLUTIONS FOR METAL OXO PHOTORESISTS

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

VAPOR PHASE THERMAL ETCH SOLUTIONS FOR METAL OXO PHOTORESISTS

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Vapor phase thermal etch solutions for metal oxo photoresists

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Holographic photopolymer compositions and composites

The present disclosure relates in one aspect to methods of preparing non-homogeneous polymer materials wherein light is used to control structure and/or composition. In certain embodiments, the present disclosure provides methods for creating gradient index optical elements including holographic elements.

LIGNIN BASED LASER LITHOGRAPHY PROCESS FOR FABRICATING 3D GRAPHENE ELECTRODE AND METHOD
20220397822 · 2022-12-15 ·

There is a method for forming a three dimensional or porous graphene electrode pattern on a substrate, the method including providing a substrate; coating the substrate with a lignin-polymer composite film; exposing a first part of the coated lignin-polymer composite film to a laser beam for transforming the first part into the graphene pattern; and removing a second part of the coated lignin-polymer composite film, which was not exposed to the laser beam, by placing the second part in water. The lignin-polymer composite film includes (1) a water-soluble alkaline lignin, (2) a polymer having bonding properties, and (3) a solvent, and an amount of the water-soluble alkaline lignin in the lignin-polymer composite film is between 5 and 60% by weight.

Lignin based laser lithography process for fabricating 3D graphene electrode and method

There is a method for forming a three dimensional or porous graphene electrode pattern on a substrate, the method including providing a substrate; coating the substrate with a lignin-polymer composite film; exposing a first part of the coated lignin-polymer composite film to a laser beam for transforming the first part into the graphene pattern; and removing a second part of the coated lignin-polymer composite film, which was not exposed to the laser beam, by placing the second part in water. The lignin-polymer composite film includes (1) a water-soluble alkaline lignin, (2) a polymer having bonding properties, and (3) a solvent, and an amount of the water-soluble alkaline lignin in the lignin-polymer composite film is between 5 and 60% by weight.

CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD FOR PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD FOR PATTERNED RESIST FILM, COMPOUND, PHOTO-ACID GENERATOR, AND PRODUCTION METHOD FOR N-ORGANOSULFONYLOXY COMPOUND
20220283500 · 2022-09-08 ·

A chemically amplified positive-type photosensitive resin composition in which the acid generator included has excellent solubility in a solvent and with which a resist pattern having excellent mask linearity is easily formed; a photosensitive dry film having a photosensitive layer formed from the composition; a method of manufacturing the photosensitive dry film; a method of manufacturing a patterned resist film using the composition; and a compound and an acid generator which can be added to the composition. The composition includes an acid generator which generates acid when irradiated with an active ray or radiation, and a resin whose solubility in alkali increases under action of an acid.

Pattern formation material and pattern formation method

According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
20220254626 · 2022-08-11 ·

Disclosed are a semiconductor structure and a manufacturing method thereof. The manufacturing method of a semiconductor structure includes: providing a to-be-etched layer; forming a photoresist layer on a surface of the to-be-etched layer; exposing the photoresist layer, the exposed photoresist layer including a mask portion and a to-be-removed portion; forming an acting material layer on a surface of the photoresist layer; the acting material layer interacting with the mask portion to form a mask layer on the top of the mask portion; removing the residual acting material layer; and etching and removing the to-be-removed portion based on the mask layer, to form a mask pattern.

LIGNIN BASED LASER LITHOGRAPHY PROCESS FOR FABRICATING 3D GRAPHENE ELECTRODE AND METHOD
20210247692 · 2021-08-12 ·

There is a method for forming a three dimensional or porous graphene electrode pattern on a substrate, the method including providing a substrate; coating the substrate with a lignin-polymer composite film; exposing a first part of the coated lignin-polymer composite film to a laser beam for transforming the first part into the graphene pattern; and removing a second part of the coated lignin-polymer composite film, which was not exposed to the laser beam, by placing the second part in water. The lignin-polymer composite film includes (1) a water-soluble alkaline lignin, (2) a polymer having bonding properties, and (3) a solvent, and an amount of the water-soluble alkaline lignin in the lignin-polymer composite film is between 5 and 60% by weight.