A method of aligning a wafer for semiconductor fabrication processes may include applying a magnetic field to a wafer, detecting one or more residual magnetic fields from one or more alignment markers within the wafer, responsive to the detected one or more residual magnetic fields, determining locations of the one or more alignment markers. The marker locations may be determined relative to an ideal grid, followed by determining a geometrical transformation model for aligning the wafer, and aligning the wafer responsive to the geometrical transformation model. Related methods and systems are also disclosed.

A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.

A sensor apparatus comprising an acoustic assembly arranged to transmit an acoustic signal to a substrate and receive at least part of the acoustic signal after the acoustic signal has interacted with the substrate, a transducer arranged to convert the at least part of the acoustic signal to an electronic signal, and, a processor configured to receive the electronic signal and determine both a topography of at least part of the substrate and a position of a target of the substrate based on the electronic signal. The sensor apparatus may for part of a lithographic apparatus or a metrology apparatus.

A measurement system for measuring an input electrical current (Ics) from a current source (CS) and generating a current measurement signal, comprising a current measuring circuit (70) having a first input terminal (72) connected to the current source and an output terminal (74) for providing the current measurement signal. The current measuring circuit further comprises one or more power supply terminals (75, 76) arranged to receive one or more voltages from a power supply (77a, 77b) for powering the current measuring circuit. The current measuring circuit also comprises a first voltage source (VD) coupled to the one or more power supply terminals, the first voltage source providing a disturbance voltage to the one or more power supply terminals, the disturbance voltage representing a voltage at the first input terminal.

A sensor is disclosed, wherein a transducer generates acoustic waves, which are received by a lens assembly. The lens assembly transmits and directs at least a part of the acoustic waves to a target. The lens assembly then receives at least a part of acoustic waves, after interaction with the target. The sensor further comprises an optical detector that comprises at least one optically reflective member located at a surface of the lens assembly, which surface is arranged opposite to a surface of the lens assembly which faces a focal plane of the lens assembly, wherein the at least one optically reflective member is mechanically displaced in response to the acoustic waves, which are received and transmitted by the lens assembly.

A distance sensor (1) for estimating a distance to a surface (OS) of an object (O), the distance sensor including a micro electric mechanical system (MEMS) (5), a detection means (30) and a processing device (40). The MEMS comprises a MEMS device (10) having a surface (12), denoted as MEMS sensor surface, to be arranged opposite the surface (OS) of said object (O) and a MEMS driver (20) for generating an ac driving signal to cause the MEMS sensor surface (12) to vibrate. The detection means (30) is to determine a value of a property of a dynamic behavior of the MEMS (5) and the processing device (40) is to estimate an average distance (h) as a measured distance (D2) between the MEMS sensor surface (12) and the surface (Os) of the object (O) based on the determined value for said property.

A sensor apparatus comprising an acoustic assembly arranged to transmit an acoustic signal to a substrate and receive at least part of the acoustic signal after the acoustic signal has interacted with the substrate, a transducer arranged to convert the at least part of the acoustic signal to an electronic signal, and, a processor configured to receive the electronic signal and determine both a topography of at least part of the substrate and a position of a target of the substrate based on the electronic signal. The sensor apparatus may for part of a lithographic apparatus or a metrology apparatus.

A method for determining a characteristic of a feature in an object, the feature being disposed below a surface of the object is disclosed. The surface of the object is irradiated with a pulsed pump radiation beam so as to produce an acoustic wave in the object. The surface of the object is then irradiated with a measurement radiation beam. A portion of the measurement radiation beam scattered from the surface is received and a characteristic of the feature in the object is determined from at least a portion of the measurement radiation beam scattered from the surface within a measurement time period. A temporal intensity distribution of the pulsed pump radiation beam is selected such that in the measurement time period a signal to background ratio is greater than a signal to background ratio achieved using a single pulse of the pulsed pump radiation beam. The signal to background ratio is a ratio of: (a) signals generated at the surface by reflections of acoustic waves from the feature to (b) background signals generated at the surface by reflections of acoustic waves which have not reflected from the feature.

An imprint lithography method of configuring an optical layer includes imprinting first features of a first order of magnitude in size on a side of a substrate with a patterning template, while imprinting second features of a second order of magnitude in size on the side of the substrate with the patterning template, the second features being sized and arranged to define a gap between the substrate and an adjacent surface.

A method of aligning a wafer for semiconductor fabrication processes may include applying a magnetic field to a wafer, detecting one or more residual magnetic fields from one or more alignment markers within the wafer, responsive to the detected one or more residual magnetic fields, determining locations of the one or more alignment markers. The marker locations may be determined relative to an ideal grid, followed by determining a geometrical transformation model for aligning the wafer, and aligning the wafer responsive to the geometrical transformation model. Related methods and systems are also disclosed.