A device includes a sensor configured to provide a temperature-sensitive voltage and an oscillator. The sensor includes: a first transistor, being a diode-connected transistor; a second transistor coupled between a source of the first transistor and ground, wherein a gate of the second transistor is controllable by an enable signal; and a current source configured to control the first transistor and comprising a third transistor, a drain of which is directly connected to a drain of the first transistor, the third transistor being a diode-connected transistor. The oscillator includes: a digital delay cell; and an adjustment device configured to, based on the temperature-sensitive voltage, adjust a delay of the digital delay cell. The digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

A device includes a sensor and an oscillator. The sensor provides a temperature-sensitive voltage. The oscillator includes a digital delay cell and an adjustment device. The adjustment device, based on the temperature-sensitive voltage, adjusts a delay of the digital delay cell, wherein the digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

A voltage-to-current circuit employs low leakage manufacturing process transistor(s) to connect at least one non-controlled terminal (e.g. source, drain, or base of MOSFET) and/or control terminal (e.g. gate of MOSFET) of a low power manufacturing process transistor to a predetermined level such as ground level or power supply voltage level when turning off the low power manufacturing process transistor, so as to connect at least two terminals of the low power manufacturing process transistor to the same voltage level, for avoiding or reducing leakage current of the low power manufacturing process transistor when it is turned off.