An FA-device-configuration-design supporting apparatus that performs editing of a profile including individual identification information and a definition of setting of an FA device and a setting range of the setting includes a profile storing unit that stores the profile, a user-specific-information-region securing function for securing, for the profile in the profile storing unit, a write-content input region in which a setting value specific to a user can be written concerning content defined in the profile, a user-specific-information writing function for writing, in the write-content input region, the content defined by the profile edited by a first user, and a user-specific-information saving function for saving, as a user-defined profile, in the profile storing unit, the profile including the content input to the write-content input region.

A velocity profile is calculated to have a lower power peak or a lower torque peak and to allow a control target to reach a predetermined position within an intended time. An input reception unit receives a designated drive time. A profiling unit generates an input profile including a leading edge portion, a flat portion, and a trailing edge portion calculated based on the principle of least action.

Systems and methods for performing 3D photoresist profile generation for a semiconductor device fabrication environment are discussed. The methods comprise receiving in a virtual fabrication environment a top contour mask and a bottom contour mask, creating a loading map using a subset of density information extracted from the top contour mask and the bottom contour mask, performing an etch operation using the loading map to generate the 3D photoresist profile, and outputting a result of the etch operation.