G05B2219/49104

Method for machining a workpiece
09817390 · 2017-11-14 · ·

An electronic control system is programmed to control movement of a cutting tool relative to a rotating workpiece. After engagement of the stock, the tool is controlled to follow a curved path until the cutting surface of the tool reaches a predetermined depth of cut in the stock. The tool is then controlled to follow a straight/linear path, with the cutting surface of the tool engaged with the stock at said predetermined depth of cut. The control system varies the feed rate as the tool rolls into cut along a known path of curvature, to control the thickness of the material which is removed as the tool rolls into cut, e.g. to induce fracture as the material begins to coil. The feed rate as the tool rolls into cut is programmed to vary in relation to an arc of engagement between a cutting surface of the cutting tool and the stock into which the cutting tool is being moved.

Method and apparatus for within-wafer profile localized tuning
10593554 · 2020-03-17 ·

A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.

METHOD AND APPARATUS FOR WITHIN-WAFER PROFILE LOCALIZED TUNING
20180226263 · 2018-08-09 ·

A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.