In some embodiments, clock input buffer circuitry and divider circuitry use a combination of externally-suppled voltages and internally-generated voltages to provide the various clock signals used by a semiconductor device. For example, a clock input buffer is configured to provide second complementary clock signals responsive to received first complementary clock signals using cross-coupled buffer circuitry coupled to a supply voltage and to drive the first complementary clock signals using driver circuitry coupled to an internal voltage. In another example, a divider circuitry may provide divided clock signals based on the second complementary clock signals via a divider coupled to the internal voltage and to drive the divided clock signals using driver circuitry coupled to the supply voltage. A magnitude of the supply voltage may be less than a magnitude of the internal voltage.

In some embodiments, clock input buffer circuitry and divider circuitry use a combination of externally-suppled voltages and internally-generated voltages to provide the various clock signals used by a semiconductor device. For example, a clock input buffer is configured to provide second complementary clock signals responsive to received first complementary clock signals using cross-coupled buffer circuitry coupled to a supply voltage and to drive the first complementary clock signals using driver circuitry coupled to an internal voltage. In another example, a divider circuitry may provide divided clock signals based on the second complementary clock signals via a divider coupled to the internal voltage and to drive the divided clock signals using driver circuitry coupled to the supply voltage. A magnitude of the supply voltage may be less than a magnitude of the internal voltage.

A peak power management (PPM) system is provided for managing peak power operations between two or more NAND memory dies. The PPM system includes a PPM circuit on each NAND memory die. Each PPM circuit includes a first pull-up driver electrically connected to a first power source and a first end of a PPM resistor; a second pull-up driver electrically connected to a second power source and a second end of the PPM resistor; a pull-down driver electrically connected to the second end of the PPM resistor; and a PPM contact pad connected to the second end of the PPM resistor. The PPM contact pads of the two or more NAND memory dies are electrically connected with each other with a common electric potential. The PPM system is configured to manage peak power operations according to the electric potential of the PPM contact pads.

Provided are embodiments for operating a high-speed deserializer. Embodiments can include receiving a clock slip signal to enable operation of the slip pulse generation circuit, and generating a slip pulse signal using the slip pulse-controlled clock generation circuit, wherein the slip pulse signal is programmable to slip one or more bits of a serial input data. Embodiments can also include generating a plurality of deserialization clocks for sampling the serial input data using the slip pulse-controlled clock generation circuit, wherein the plurality of deserialization clocks are generated simultaneously with each other, and providing the plurality of deserialization clocks to the deserializer to selectively sample the serial input data.

Provided are embodiments for operating a high-speed deserializer. Embodiments can include receiving a clock slip signal to enable operation of the slip pulse generation circuit, and generating a slip pulse signal using the slip pulse-controlled clock generation circuit, wherein the slip pulse signal is programmable to slip one or more bits of a serial input data. Embodiments can also include generating a plurality of deserialization clocks for sampling the serial input data using the slip pulse-controlled clock generation circuit, wherein the plurality of deserialization clocks are generated simultaneously with each other, and providing the plurality of deserialization clocks to the deserializer to selectively sample the serial input data.

A circuit for controlling a switch of a power converter includes a first clock signal generator configured to generate a first clock signal and a switching signal generator configured to generate a switching signal to control the switch of the power converter based on the first clock signal. The circuit further includes error detection circuitry configured to output an error indication and a second clock signal generator configured to generate, in response to the error indication, a second clock signal that comprises an edge of a clock cycle of the second clock signal that corresponds to when the switching signal deactivates the switch of the power converter plus a time delay. The switching signal generator is configured to generate the switching signal to control the switch of the power converter further based on the second clock signal in response to the error indication being output by the error detection circuitry.

A circuit for controlling a switch of a power converter includes a first clock signal generator configured to generate a first clock signal and a switching signal generator configured to generate a switching signal to control the switch of the power converter based on the first clock signal. The circuit further includes error detection circuitry configured to output an error indication and a second clock signal generator configured to generate, in response to the error indication, a second clock signal that comprises an edge of a clock cycle of the second clock signal that corresponds to when the switching signal deactivates the switch of the power converter plus a time delay. The switching signal generator is configured to generate the switching signal to control the switch of the power converter further based on the second clock signal in response to the error indication being output by the error detection circuitry.

A nonvolatile memory device includes a first pin that receives a first signal, a second pin that receives a second signal, third pins that receive third signals, a fourth pin that receives a write enable signal, a memory cell array, and a memory interface circuit that obtains a command, an address, and data from the third signals in a first mode and obtains the command and the address from the first signal and the second signal and the data from the third signals in a second mode. In the first mode, the memory interface circuit obtains the command from the third signals and obtains the address from the third signals. In the second mode, the memory interface circuit obtains the command from the first signal and the second signal and obtains the address from the first signal and the second signal.

A nonvolatile memory device includes a first pin that receives a first signal, a second pin that receives a second signal, third pins that receive third signals, a fourth pin that receives a write enable signal, a memory cell array, and a memory interface circuit that obtains a command, an address, and data from the third signals in a first mode and obtains the command and the address from the first signal and the second signal and the data from the third signals in a second mode. In the first mode, the memory interface circuit obtains the command from the third signals and obtains the address from the third signals. In the second mode, the memory interface circuit obtains the command from the first signal and the second signal and obtains the address from the first signal and the second signal.

A clock generator device includes a first clock generator circuit, a second clock generator circuit, a detector circuit and a selection circuit. The first clock generator circuit has a first starting voltage and generates a first clock signal in response to a supply voltage. The second clock generator circuit has a second starting voltage and generates a second clock signal in response to the supply voltage. The detector circuit detects the second clock signal to generate a validation signal. The selection circuit selectively outputs one of the first clock signal and the second clock signal according to the validation signal. The first starting voltage is lower than the second starting voltage.