G06F11/1012

Hierarchical error correction code decoding using multistage concatenated codes

Hierarchical coding architectures and schemes based on multistage concatenated codes are described. For instance, multiple encoder and decoder hierarchies may be implemented along with use of corresponding stages of concatenated codes. The coding scheme generally includes an inner coding scheme (e.g., a polar coding scheme, such as a hybrid polar code or Bose Chaudhuri and Hocquenghem (BCH) code), an outer coding scheme (e.g., a Reed-Solomon (RS) coding scheme), and one or more middle coding schemes. The inner coding scheme is based on a polarization transformation (e.g., polar codes with cyclic redundancy check (CRC) codes, polar codes with dynamic freezing codes, polarization-adjusted convolutional (PAC) codes, etc.) which allows for embedding parity data from an outer code inside a codeword along with the user data. The outer coding scheme has a similar concatenated structure (e.g., of an inner RS code with an outer RS code).

Non-volatile memory device, controller for controlling the same, storage device having the same, and reading method thereof

A controller including a non-volatile memory interface circuit connected to at least one non-volatile memory device and configured to control the at least one non-volatile memory device; an error correction circuit configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit is further configured to: receive side information from the at least one non-volatile memory device; predict a distribution of memory cells based on the side information; and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.

MEMORY DEVICE AND OPERATING METHOD THEREOF
20230037996 · 2023-02-09 ·

An operating method of a memory device includes storing position information regarding a codeword including an erasure and erasure information including position information regarding the erasure in a memory region, loading the position information regarding the codeword to a row decoder and a column decoder, determining whether a read address corresponding to a read instruction is identical to the position information regarding the codeword including the erasure, in response to the read instruction from a host, transmitting the position information of the erasure to an error correction code (ECC) decoder, when the read address is identical to the position information regarding the codeword including the erasure, and correcting, by the ECC decoder, an error in a codeword received from a memory cell array using the position information regarding the erasure.

Protecting data memory in a signal processing system

Data memory protection is provided for a signal processing system such as a radar system in which the data memory is protected with a common set of parity bits rather than requiring a set of parity bits for each memory word as in Error Correction Coded (ECC) memories. The common set of parity bits may be updated as memory words in the data memory are accessed as part of signal processing of one or more digital signals. The memory protection ensures that in the absence of memory errors the common parity bits are zero at the end of processing the digital signals as long as each word in the data memory that is used for storing the signal processing data is written and read an equal number of times.

Pre-positioning target content in a storage network

A method for execution in a storage network, the method begins by determining a user device group content preference, wherein the user group content includes target content for a user device group and the determining includes predicting future target content for the user group. The method continues by selecting a plurality of network edge units for staging encoded data slices, identifying target content for partial download to the plurality of network edge units and dispersed error encoding the target content to generate a set of encoded data slices. The method then continues by identifying encoded data slices from the set of encoded data slices corresponding to the target content for partial download and determining a partial downloading schedule for sending the encoded data slices for partial download to each network edge unit of the plurality of network edge units. The method continues by facilitating partial downloading of the target content by sending the encoded data slices for partial download to each network edge unit of the plurality of network edge units.

Masking Defective Bits in a Storage Array

A method of failure mapping is provided. The method includes determining that a non-volatile memory block in the memory has a defect and generating a mask that indicates the non-volatile memory block and the defect. The method includes reading from the non-volatile memory block with application of the mask, wherein the reading and the application of the mask are performed by the non-volatile solid-state storage.

METHOD OF CORRECTING ERRORS IN A MEMORY ARRAY AND A SYSTEM FOR IMPLEMENTING THE SAME

A method of correcting errors in a memory array. The method includes configuring a first memory array with a first error correction code (ECC) to provide error correction of data stored in the first memory array, configuring a second memory array with a second ECC to provide error correction of the data stored in the first memory array, performing a reflow process on the first and second memory array, and correcting data stored in the first memory array based on at least the first ECC or the second ECC. The first memory array includes a first set of memory cells arranged in rows and columns. The second memory array includes a second set of memory cells arranged in rows and columns.

MEMORY SYSTEM AND METHOD OF CONTROLLING NONVOLATILE MEMORY
20180011760 · 2018-01-11 · ·

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller manages a plurality of namespaces for storing a plurality of kinds of data having different update frequencies. The controller encodes write data by using first coding for reducing wear of a memory cell to generate first encoded data, and generates second encoded data to be written to the nonvolatile memory by adding an error correction code to the first encoded data. The controller changes the ratio between the first encoded data and the error correction code based on the namespace to which the write data is to be written.

APPARATUSES AND METHODS FOR LAYER-BY-LAYER ERROR CORRECTION

One example of layer-by-layer error correction can include iteratively error correcting the codeword on a layer-by-layer basis with the first error correction circuit in a first mode and determining on the layer-by-layer basis whether a number of parity errors in a particular layer is less than a threshold number of parity errors. The codeword can be transferred to a second error correction circuit when the number of parity errors is less than the threshold number of parity errors. The codeword can be iteratively error corrected with the first error correction circuit in a second mode when the number of parity errors is at least the threshold number of parity errors. The threshold number of parity errors can be at least partially based on an adjustable code rate of the first error correction circuit or the second error correction circuit.

ADAPTIVE READ THRESHOLD VOLTAGE TRACKING WITH BIT ERROR RATE ESTIMATION BASED ON NON-LINEAR SYNDROME WEIGHT MAPPING

Adaptive read threshold voltage tracking techniques are provided that employ bit error rate estimation based on a non-linear syndrome weight mapping. An exemplary device comprises a controller configured to determine a bit error rate for at least one of a plurality of read threshold voltages in a memory using a non-linear mapping of a syndrome weight to the bit error rate for the at least one of the plurality of read threshold voltages.