A method for analyzing a specification parameter of an electronic component includes inputting a package type and at least one engineering drawing image of an electronic component; acquiring a probability value that in each view of the different viewing directions each of the plurality of specification parameter of the electronic component is labeled; taking the view of each of the plurality of specification parameters in the view direction with a highest probability value as a recommended view; performing a box selection on the plurality of specification parameters for at least one engineering drawing image with the same viewing direction as that of the recommended view by an object detection model; and identifying box-selected specification parameters to acquire a size value of identified specification parameters from the at least one engineering drawing image, and converting the size value into a corresponding editable text for output.

In some embodiments, an apparatus can include a printed circuit board (PCB) that has layers and includes a first portion and a second portion. The first portion can have a data port and a power port. A first layer is associated with data of the first portion of the PCB, and a second layer is associated with power of the first portion of the PCB. The second portion can have a data port and a power port. A third layer is associated with data of the second portion, and a fourth layer is associated with power of the second portion. The first portion or the second portion can have vias defining an electromagnetic interference (EMI) shield. The apparatus can include a power filter and a data filter that can, respectively, isolate power and data of the first portion from the second portion.

The present disclosure provides a method for fabricating an integrated circuit (IC). The method includes receiving an IC layout having active regions, conductive contact features landing on the active regions, and a conductive via feature to be landing on a first subset of the conductive contact features and to be spaced from a second subset of the conductive contact features; evaluating a spatial parameter of the conductive via feature to the conductive contact features; and modifying the IC layout according to the spatial parameter such that the conductive via feature has a S-curved shape.

The present disclosure provides a method for fabricating an integrated circuit (IC). The method includes receiving an IC layout having active regions, conductive contact features landing on the active regions, and a conductive via feature to be landing on a first subset of the conductive contact features and to be spaced from a second subset of the conductive contact features; evaluating a spatial parameter of the conductive via feature to the conductive contact features; and modifying the IC layout according to the spatial parameter such that the conductive via feature has a S-curved shape.

The disclosure describes the implementation of automated techniques for optimizing quantum circuits of the size and type expected in quantum computations that outperform classical computers. The disclosure shows how to handle continuous gate parameters and report a collection of fast algorithms capable of optimizing large-scale-scale quantum circuits. For the suite of benchmarks considered, the techniques described obtain substantial reductions in gate counts. In particular, the techniques in this disclosure provide better optimization in significantly less time than previous approaches, while making minimal structural changes so as to preserve the basic layout of the underlying quantum algorithms. The results provided by these techniques help bridge the gap between computations that can be run on existing quantum computing hardware and more advanced computations that are more challenging to implement in quantum computing hardware but are the ones that are expected to outperform what can be achieved with classical computers.

The disclosure describes the implementation of automated techniques for optimizing quantum circuits of the size and type expected in quantum computations that outperform classical computers. The disclosure shows how to handle continuous gate parameters and report a collection of fast algorithms capable of optimizing large-scale-scale quantum circuits. For the suite of benchmarks considered, the techniques described obtain substantial reductions in gate counts. In particular, the techniques in this disclosure provide better optimization in significantly less time than previous approaches, while making minimal structural changes so as to preserve the basic layout of the underlying quantum algorithms. The results provided by these techniques help bridge the gap between computations that can be run on existing quantum computing hardware and more advanced computations that are more challenging to implement in quantum computing hardware but are the ones that are expected to outperform what can be achieved with classical computers.

Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a device may receive layout information that identifies a configuration of an antenna array of antennas, wherein the antenna array is to include a plurality of antenna subarrays and a plurality of antenna chips, wherein each antenna chip is communicatively coupled to antennas of an associated antenna subarray; determine, based at least in part on a phase shift characteristic associated with the antennas, a set of phase differences between antenna subarrays; determine, based at least in part on the set of phase differences, a chip position of each antenna chip relative to the associated antenna subarray; and generate, based at least in part on the chip position of each antenna chip, a layout of an antenna package to receive the antenna array and the plurality of antenna chips. Numerous other aspects are provided.

Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a device may receive layout information that identifies a configuration of an antenna array of antennas, wherein the antenna array is to include a plurality of antenna subarrays and a plurality of antenna chips, wherein each antenna chip is communicatively coupled to antennas of an associated antenna subarray; determine, based at least in part on a phase shift characteristic associated with the antennas, a set of phase differences between antenna subarrays; determine, based at least in part on the set of phase differences, a chip position of each antenna chip relative to the associated antenna subarray; and generate, based at least in part on the chip position of each antenna chip, a layout of an antenna package to receive the antenna array and the plurality of antenna chips. Numerous other aspects are provided.

Interconnect structures that maximize integrated circuit (IC) density and corresponding formation techniques are disclosed. An exemplary IC device includes a gate layer extending along a first direction. An interconnect structure disposed over the gate layer includes odd-numbered interconnect routing layers oriented along a second direction that is substantially perpendicular to the first direction and even-numbered interconnect routing layers oriented along a third direction that is substantially parallel to the first direction. In some implementations, a ratio of a gate pitch of the gate layer to a pitch of a first of the even-numbered interconnect routing layers to a pitch of a third of the even-numbered interconnect routing layers is 3:2:4. In some implementations, a pitch of a first of the odd-numbered interconnect routing layers to a pitch of a third of the odd-numbered interconnect routing layers to a pitch of a seventh of the odd-numbered interconnect routing layers is 1:1:2.

Interconnect structures that maximize integrated circuit (IC) density and corresponding formation techniques are disclosed. An exemplary IC device includes a gate layer extending along a first direction. An interconnect structure disposed over the gate layer includes odd-numbered interconnect routing layers oriented along a second direction that is substantially perpendicular to the first direction and even-numbered interconnect routing layers oriented along a third direction that is substantially parallel to the first direction. In some implementations, a ratio of a gate pitch of the gate layer to a pitch of a first of the even-numbered interconnect routing layers to a pitch of a third of the even-numbered interconnect routing layers is 3:2:4. In some implementations, a pitch of a first of the odd-numbered interconnect routing layers to a pitch of a third of the odd-numbered interconnect routing layers to a pitch of a seventh of the odd-numbered interconnect routing layers is 1:1:2.