An electronic device coupled to a display includes a graphics card and a processor. The graphics card reads the extended display identification data from the display. The processor determines, according to the extended display identification data, that the display is able to display a default resolution at a first refresh rate at most, and determines, according to the extended display identification data, whether the display device is able to display the default resolution at a second refresh rate that exceeds the first refresh rate. When it is determined that the display is able to display the default resolution at the second refresh rate, the processor adds the second refresh rate into the extended display identification data.

The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.

The present disclosure provides a shift register, including: an input circuit, electrically connected to a triggering signal line that provides a triggering signal, a first clock signal line that provides a first clock signal, and a first node; configured for controlling whether the triggering signal is outputted to the first node based on the first clock signal; a control circuit, electrically connected to the first node, a second node, the first clock signal line, a second clock signal line that provides a second clock signal, and a turn-on signal line that provides a turn-on signal, configured for controlling whether the turn-on signal is outputted to the second node; and an output circuit, electrically connected to the first node, the second node, a first signal line that provides a first signal, a second signal line that provides a second signal, and a driving signal output line that outputs a driving signal.

The present disclosure provides a shift register, including: an input circuit, electrically connected to a triggering signal line that provides a triggering signal, a first clock signal line that provides a first clock signal, and a first node; configured for controlling whether the triggering signal is outputted to the first node based on the first clock signal; a control circuit, electrically connected to the first node, a second node, the first clock signal line, a second clock signal line that provides a second clock signal, and a turn-on signal line that provides a turn-on signal, configured for controlling whether the turn-on signal is outputted to the second node; and an output circuit, electrically connected to the first node, the second node, a first signal line that provides a first signal, a second signal line that provides a second signal, and a driving signal output line that outputs a driving signal.

Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

An acid chemical mechanical polishing composition polishes silicon nitride over silicon dioxide and simultaneously inhibits damage to the silicon dioxide. The acid chemical mechanical polishing composition includes polyvinylpyrrolidone polymers, anionic functional colloidal silica abrasive particles and an amine carboxylic acid. The pH of the acid chemical mechanical polishing composition is 5 or less.

The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.

A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.