The present invention is in the field of an atomic scale data storage device which uses vacancy manipulation, a method of providing said device, and a method of operating said device. Prior art mass data storage devices typically rely on magnetic materials forming discrete arrays or on nanoscale transistors. Further examples are e.g. optical systems such as a DVD and a compact disk. These devices and systems have a large, but for some applications still limited, storage capacity.

A thermomechanical memory/logic device is disclosed. In embodiments, the thermomechanical device includes a first thermally controlled terminal (e.g., hot terminal); a second thermally controlled terminal (e.g., cool terminal/base); a stem or other structure that can be thermally expanded connected to the cool terminal; and a thermal conductive head coupled to the stem. The head can exchange heat with the hot terminal. The stem and head are between the first thermally controlled terminal and the second thermally controlled terminal, wherein the stem expands or contracts in response to heat absorbed or given off by the thermal conductive head, causing the head to move towards the first thermally controlled terminal or towards the second thermally controlled terminal until a stable state is reached. For example, bistable thermal states can be used to implement logic states (e.g., ZERO or ONE states).

A local probe storage array is provided that includes a substrate, and a polymeric layer over the substrate, the polymeric layer comprising a crosslinking agent comprising at least three alkyne groups.