A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS.sub.2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (‘1’) and an off state (‘0’) of the memory respectively, and accordingly the purpose of storage is achieved.

A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0≤b/(a+b)≤0.6, (2) 0≤(c+d)/(a+b+c+d+e)≤0.5, (3) 0≤b≤50, (4) 0≤c≤40, (5) 0≤d≤45, (6) 0≤e≤40, and (7) 20≤b+c+d+e≤80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.

A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS.sub.2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (1) and an off state (0) of the memory respectively, and accordingly the purpose of storage is achieved.

Provided is an optical recording medium including two or more recording layers, and a light irradiation surface that is irradiated with light for recording an information signal on the two or more recording layers. Among the two or more recording layers, at least one layer other than a layer located on the deepest side from the light irradiation surface includes an oxide of a metal A, an oxide of a metal B, and an oxide of a metal C. The metal A is at least one kind among W, Mo, and Zr, the metal B is Mn, and the metal C is at least one kind among Cu, Ag, and Ni. Ratios of the metal A, the metal B, and the metal C satisfy a relationship of 0.46x1 (provided that, x1=a/(b+0.8c), a representing an atomic ratio [atom %] of the metal A with respect to the sum of the metal A, the metal B, and the metal C, b representing an atomic ratio [atom %] of the metal B with respect to the sum of the metal A, the metal B, and the metal C, and c representing an atomic ratio [atom %] of the metal C with respect to the sum of the metal A, the metal B, and the metal C.

An information recording medium includes three or more information layers. The three or more information layers include a first information layer including a first dielectric film, a recording film, and a second dielectric film in this order. The first dielectric film contains an oxide of D1. The D1 represents at least one element selected from a first group consisting of Nb, Mo, Ta, W, Ti, Bi, and Ce. The recording film contains at least W, Cu, Mn, and oxygen and M. The M represents at least one element selected from a second group consisting of Nb, Mo, Ta, and Ti. The W, the Cu, the Mn, and the M except the oxygen in the recording film satisfy a following formula (1):

W.sub.xCu.sub.yMn.sub.zM.sub.100-x-y-z (atom %)(1) wherein x, y, and z satisfy 15x60, yz, 0<z40, and 60x+y+z98.

A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0b/(a+b)0.6, (2) 0(c+d)/(a+b+c+d+e)0.5, (3) 0b50, (4) 0c40, (5) 0d45, (6) 0e40, and (7) 20b+c+d+e80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.

The invention concerns a nanostructured layer system comprising a substrate, an intermediate layer, which comprises an aromatic azo compound, applied to the substrate, and a metallic cover layer applied thereto, whereby the intermediate layer is structured in a light-induced manner by irradiation of light.

The nanostructured layer system is characterized in that the metallic cover layer contains nickel as a ferromagnetic metal and that the light is linearly polarized for structuring.

The invention further concerns a method for producing such a nanostructured layer system.

Provided is an optical recording medium including two or more recording layers, and a light irradiation surface that is irradiated with light for recording an information signal on the two or more recording layers. Among the two or more recording layers, at least one layer other than a layer located on the deepest side from the light irradiation surface includes an oxide of a metal A, an oxide of a metal B, and an oxide of a metal C. The metal A is at least one kind among W, Mo, and Zr, the metal B is Mn, and the metal C is at least one kind among Cu, Ag, and Ni. Ratios of the metal A, the metal B, and the metal C satisfy a relationship of 0.46x1 (provided that, x1=a/(b+0.8c), a representing an atomic ratio [atom %] of the metal A with respect to the sum of the metal A, the metal B, and the metal C, b representing an atomic ratio [atom %] of the metal B with respect to the sum of the metal A, the metal B, and the metal C, and c representing an atomic ratio [atom %] of the metal C with respect to the sum of the metal A, the metal B, and the metal C.

An optical recording medium includes a reflective layer, a first dielectric layer, a phase-change recording layer, and a second dielectric layer. The phase-change recording layer has an average composition represented by SbxInyMz, in which M is at least one of Mo, Ge, Mn, and Al, and x, y, and z are values in the ranges 0.70x0.92, 0.05y0.20, and 0.03z0.10, respectively, provided that x+y+z=1, the first dielectric layer includes a zirconium oxide-containing composite material or tantalum oxide, and the second dielectric layer includes a chromium oxide-containing composite material or silicon nitride.

An optical recording medium includes a reflective layer, a first dielectric layer, a phase-change recording layer, and a second dielectric layer. The phase-change recording layer has an average composition represented by SbxInyMz, in which M is at least one of Mo, Ge, Mn, and Al, and x, y, and z are values in the ranges 0.70x0.92, 0.05y0.20, and 0.03z0.10, respectively, provided that x+y+z=1, the first dielectric layer includes a zirconium oxide-containing composite material or tantalum oxide, and the second dielectric layer includes a chromium oxide-containing composite material or silicon nitride.