Patent classifications
G11B5/11
Magnetic Recording Head with Stable Magnetization of Shields
Aspects of the present disclosure generally relate to a magnetic recording head that includes a main pole, a leading shield, a first side shield disposed on a first side of the main pole, a second side shield disposed on a second side of the main pole, and a trailing shield. The trailing shield is disposed on a trailing side of the main pole. One or more approaches are disclosed to control return-fluxes. In some embodiments, at least one of the upper return pole, the leading shield, the trailing shield, the first side shield, and the second side shield includes a laminate structure having at least a pair of ferromagnetic layers, and a non-magnetic spacer layer disposed between adjacent ferromagnetic layers. In some embodiments, one or more shunts are positioned, such as connecting the leading shield to the upper return pole in order to create circuits to control magnetic flux.
Magnetic Recording Head with Stable Magnetization of Shields
Aspects of the present disclosure generally relate to a magnetic recording head that includes a main pole, a leading shield, a first side shield disposed on a first side of the main pole, a second side shield disposed on a second side of the main pole, and a trailing shield. The trailing shield is disposed on a trailing side of the main pole. One or more approaches are disclosed to control return-fluxes. In some embodiments, at least one of the upper return pole, the leading shield, the trailing shield, the first side shield, and the second side shield includes a laminate structure having at least a pair of ferromagnetic layers, and a non-magnetic spacer layer disposed between adjacent ferromagnetic layers. In some embodiments, one or more shunts are positioned, such as connecting the leading shield to the upper return pole in order to create circuits to control magnetic flux.
Magnetic flux guiding device with spin torque oscillator (STO) film having negative spin polarization layers in assisted writing application
A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.
Magnetic flux guiding device with spin torque oscillator (STO) film having negative spin polarization layers in assisted writing application
A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.
Tape Head With Side-Shielded Writers And Process For Making Same
The present disclosure generally relates to a tape head of a tape drive, and methods of forming thereof. In one embodiment, a tape head for magnetic storage devices comprises a trailing shield, a leading shield, a first write pole coupled to the trailing shield, a second write pole coupled to the leading shield, and side shields spaced from the first write pole and the second write pole by a thin insulation layer. The side shields are further disposed between the trailing shield and the leading shield. In another embodiment, a tape head for magnetic storage devices comprises a main pole disposed between a trailing shield and a leading shield and a side shield disposed adjacent to the main pole. The side shield is further disposed between the trailing shield and the leading shield and spaced from the main pole by a thin insulation layer.
Tape Head With Side-Shielded Writers And Process For Making Same
The present disclosure generally relates to a tape head of a tape drive, and methods of forming thereof. In one embodiment, a tape head for magnetic storage devices comprises a trailing shield, a leading shield, a first write pole coupled to the trailing shield, a second write pole coupled to the leading shield, and side shields spaced from the first write pole and the second write pole by a thin insulation layer. The side shields are further disposed between the trailing shield and the leading shield. In another embodiment, a tape head for magnetic storage devices comprises a main pole disposed between a trailing shield and a leading shield and a side shield disposed adjacent to the main pole. The side shield is further disposed between the trailing shield and the leading shield and spaced from the main pole by a thin insulation layer.
Perpendicular magnetic recording (PMR) writer with recessed leading shield
A PMR (perpendicular magnetic recording) write head includes a main write pole (MP) that is surrounded by magnetic shields, including laterally disposed side shields (SS), a trailing shield (TS) and a leading shield (LS). The leading shield includes a leading-edge taper (LET) that conformally abuts a tapered side of the write pole. The leading-edge shield and the leading-edge taper can be independently recessed in a proximal direction away from an air bearing surface (ABS) plane so that one or the other of them is recessed and the other remains coplanar with the ABS, or both are recessed by independent amounts. In another configuration the LS is not planar but has a recessed portion in a center track region and two surrounding regions that are coplanar with the ABS plane.
Perpendicular magnetic recording (PMR) writer with recessed leading shield
A PMR (perpendicular magnetic recording) write head includes a main write pole (MP) that is surrounded by magnetic shields, including laterally disposed side shields (SS), a trailing shield (TS) and a leading shield (LS). The leading shield includes a leading-edge taper (LET) that conformally abuts a tapered side of the write pole. The leading-edge shield and the leading-edge taper can be independently recessed in a proximal direction away from an air bearing surface (ABS) plane so that one or the other of them is recessed and the other remains coplanar with the ABS, or both are recessed by independent amounts. In another configuration the LS is not planar but has a recessed portion in a center track region and two surrounding regions that are coplanar with the ABS plane.
BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.
BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.