A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

A magnetic field-assisted magnetic recording (MAMR) head is provided, which includes a recording main pole, a seed layer, and a spin torque oscillator (STO) positioned over the main pole, in this order, in a stacking direction from a leading side to a trailing side of the recording head. The STO comprises a spin polarized layer (SPL), an interlayer with fcc structure, and a field generating layer (FGL), in this order in the stacking direction. The FGL comprises a low magnetic flux density interface (LMFDI) layer with bcc structure that directly contacts the interlayer.

A magnetic field-assisted magnetic recording (MAMR) head is provided, which includes a recording main pole, a seed layer, and a spin torque oscillator (STO) positioned over the main pole, in this order, in a stacking direction from a leading side to a trailing side of the recording head. The STO comprises a spin polarized layer (SPL), an interlayer with fcc structure, and a field generating layer (FGL), in this order in the stacking direction. The FGL comprises a low magnetic flux density interface (LMFDI) layer with bcc structure that directly contacts the interlayer.

A method for manufacturing a magnetic core module in a magnetic head, the magnetic core module and the magnetic head. The method for manufacturing the magnetic core module includes: a process for placing a magnetic core group in a holder mold cavity as an insert; and a process for injection-molding in the holder mold cavity. A method for manufacturing the magnetic core module allows the magnetic core group and the holder to be integrally injection-molded with a method of injection molding which uses the magnetic core group as an insert. The method simplifies the process of manufacturing a magnetic head to improve production efficiency, and saves labor and production costs. Further, the method prevents failures such as positional displacement and scattering of magnetic cores, which tends to occur when assembling thin and small magnetic cores, and ensures an ideal yield for a product.

Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, a transformer may be formed in the electrical package. The transformer may include a first conductive loop that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first conductive loop from a second conductive loop that is formed in the package. Additional embodiments of the invention include forming a capacitor formed in the electrical package. For example, the capacitor may include a first capacitor plate that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first capacitor plate form a second capacitor plate that is formed in the package. The thin dielectric spacer material in the transformer and capacitor allow for increased coupling factors and capacitance density in electrical components.

A method of manufacturing a component carrier includes providing a stack with electrically conductive layer structures and at least one electrically insulating layer structure, embedding a magnetic inlay in the stack, and forming an electrically conductive coil structure at least partially based on the electrically conductive layer structures and surrounding at least part of the magnetic inlay.

Methods of forming a near field transducer (NFT), the methods including the steps of depositing plasmonic material on a substrate; laser annealing at least a portion of the deposited plasmonic material at a wavelength from 100 nm to 2.0 micrometers (μm) to induce liquid phase epitaxy (LPE) in the annealed deposited plasmonic material to form a epitaxially modified plasmonic material; and forming a NFT from at least a portion of the epitaxially modified plasmonic material are disclosed as well as other methods and devices such as those formed.

Methods of forming a near field transducer (NFT), the methods including the steps of depositing plasmonic material on a substrate; laser annealing at least a portion of the deposited plasmonic material at a wavelength from 100 nm to 2.0 micrometers (μm) to induce liquid phase epitaxy (LPE) in the annealed deposited plasmonic material to form a epitaxially modified plasmonic material; and forming a NFT from at least a portion of the epitaxially modified plasmonic material are disclosed as well as other methods and devices such as those formed.