The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, a gap layer, a second spin hall effect layer, a second free layer, and a second shield. The gap layer is disposed between the first spin hall effect layer and the second spin hall effect layer. Electrical lead connections are located about the first spin hall effect layer, the second spin hall effect layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

Provided herein is an apparatus including a head over-coat and a depleted region in the head over-coat. A media over-coat is deposited in the depleted region. A near field transducer is adjacent to the head over-coat, wherein the near field transducer combusts the deposited media over-coat.

A method provides a magnetic read apparatus. A sensor stack is deposited. The read sensor is defined from the stack such that the sensor has sides forming a junction angle of 75 degrees-105 degrees from a sensor bottom. Defining the sensor includes performing a first ion mill at a first angle and a first energy and performing a second ion mill at a second angle greater than the first angle and at a second energy less than the first energy. The first angle is 5 degrees-30 degrees from normal to the top surface. After the first ion mill, less than half of the stack's bottom layer depth remains unmilled. Magnetic bias structure(s) adjacent to the sides may be formed. The magnetic bias structure(s) include a side shielding material having at least one of the saturation magnetization greater than 800 emu/cm.sup.3 and an exchange length less than five nanometers.

A method provides a magnetic read apparatus. A sensor stack is deposited. The read sensor is defined from the stack such that the sensor has sides forming a junction angle of 75 degrees-105 degrees from a sensor bottom. Defining the sensor includes performing a first ion mill at a first angle and a first energy and performing a second ion mill at a second angle greater than the first angle and at a second energy less than the first energy. The first angle is 5 degrees-30 degrees from normal to the top surface. After the first ion mill, less than half of the stack's bottom layer depth remains unmilled. Magnetic bias structure(s) adjacent to the sides may be formed. The magnetic bias structure(s) include a side shielding material having at least one of the saturation magnetization greater than 800 emu/cm.sup.3 and an exchange length less than five nanometers.

A system according to one embodiment includes a magnetic head having a plurality of sensors arranged to simultaneously read at least three immediately adjacent data tracks on a magnetic medium, wherein none of the sensors share more than one lead with any other of the sensors. Such embodiment may be implemented in a magnetic data storage system such as a disk drive system, which may include a magnetic head, a drive mechanism for passing a magnetic medium (e.g., hard disk) over the magnetic head, and a controller electrically coupled to the magnetic head.

A data writer can have at least a write pole separated from a return pole by a non-magnetic lamination. The non-magnetic lamination may consist of first, second, and third non-magnetic materials that are each different and configured to provide a physical protrusion on an air bearing surface of less than 4 Angstroms.

A data writer can have at least a write pole separated from a return pole by a non-magnetic lamination. The non-magnetic lamination may consist of first, second, and third non-magnetic materials that are each different and configured to provide a physical protrusion on an air bearing surface of less than 4 Angstroms.

An apparatus has a main pole layer of magnetic material, a second layer of magnetic material, a first gap layer of non-magnetic material between the main pole layer and the second layer of magnetic material, and a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material. The second gap layer of non-magnetic material can be directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. A method of manufacturing such a device is also described.