The present disclosure provides systems and methods associated with data storage using atomic films, such as graphene, boron nitride, or silicene. A platter assembly may include at least one platter that has one or more substantially planar surfaces. One or more layers of a monolayer atomic film, such as graphene, may be positioned on a planar surface. Data may be stored on the atomic film using one or more vacancies, dopants, defects, and/or functionalized groups (presence or lack thereof) to represent one of a plurality of states in a multi-state data representation model, such as a binary, a ternary, or another base N data storage model. A read module may detect the vacancies, dopants, and/or functionalized groups (or a topographical feature resulting therefrom) to read the data stored on the atomic film.

The present disclosure provides systems and methods associated with data storage using atomic films, such as graphene, boron nitride, or silicene. A platter assembly may include at least one platter that has one or more substantially planar surfaces. One or more layers of a monolayer atomic film, such as graphene, may be positioned on a planar surface. Data may be stored on the atomic film using one or more vacancies, dopants, defects, and/or functionalized groups (presence or lack thereof) to represent one of a plurality of states in a multi-state data representation model, such as a binary, a ternary, or another base N data storage model. A read module may detect the vacancies, dopants, and/or functionalized groups (or a topographical feature resulting therefrom) to read the data stored on the atomic film.

A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0≤b/(a+b)≤0.6, (2) 0≤(c+d)/(a+b+c+d+e)≤0.5, (3) 0≤b≤50, (4) 0≤c≤40, (5) 0≤d≤45, (6) 0≤e≤40, and (7) 20≤b+c+d+e≤80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.

A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0≤b/(a+b)≤0.6, (2) 0≤(c+d)/(a+b+c+d+e)≤0.5, (3) 0≤b≤50, (4) 0≤c≤40, (5) 0≤d≤45, (6) 0≤e≤40, and (7) 20≤b+c+d+e≤80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.

A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0b/(a+b)0.6, (2) 0(c+d)/(a+b+c+d+e)0.5, (3) 0b50, (4) 0c40, (5) 0d45, (6) 0e40, and (7) 20b+c+d+e80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.

A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0b/(a+b)0.6, (2) 0(c+d)/(a+b+c+d+e)0.5, (3) 0b50, (4) 0c40, (5) 0d45, (6) 0e40, and (7) 20b+c+d+e80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.