A circular printed memory device and a method for fabricating the circular printed memory device are disclosed. For example, the circular printed memory device includes a base substrate, a plurality of bottom electrodes arranged in a circular pattern on the base substrate, a ferroelectric layer on top of the plurality of bottom electrodes and a single top electrode on the ferroelectric layer that contacts each one of the plurality of bottom electrodes via the ferroelectric layer.

A circular printed memory device and a method for fabricating the circular printed memory device are disclosed. For example, the circular printed memory device includes a base substrate, a plurality of bottom electrodes arranged in a circular pattern on the base substrate, a ferroelectric layer on top of the plurality of bottom electrodes and a single top electrode on the ferroelectric layer that contacts each one of the plurality of bottom electrodes via the ferroelectric layer.

A circular printed memory device and a method for fabricating the circular printed memory device are disclosed. For example, the circular printed memory device includes a base substrate, a plurality of bottom electrodes arranged in a circular pattern on the base substrate, a ferroelectric layer on top of the plurality of bottom electrodes and a single top electrode on the ferroelectric layer that contacts each one of the plurality of bottom electrodes via the ferroelectric layer.

A circular printed memory device and a method for fabricating the circular printed memory device are disclosed. For example, the circular printed memory device includes a base substrate, a plurality of bottom electrodes arranged in a circular pattern on the base substrate, a ferroelectric layer on top of the plurality of bottom electrodes and a single top electrode on the ferroelectric layer that contacts each one of the plurality of bottom electrodes via the ferroelectric layer.

A circular memory device includes a plurality of bottom electrodes, a plurality of top electrodes, a ferroelectric layer, and a plurality of memory storage locations within the ferroelectric layer at a crossover point of each of the bottom electrodes and each top electrode. Contact pads of the bottom electrodes and top electrodes may include a perimeter that defines an annular sector that allows a memory operation to be performed on the circular memory device across a range of rotational positions. In an example implementation, the memory operation may be performed on the circular memory device regardless of the rotational orientation of the circular memory device relative to a reader.