A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

An automatic magnetic flow recording device, comprises a multitude of coaxially disposed hard magnetic rotating wheels wherein the hard magnetic rotating wheels are circular, and rotate with respect to each other by a predetermined transmission ratio. Each hard magnetic rotating wheel has at least one corresponding biaxial magnetoresistive angle sensor. The biaxial magnetoresistive angle sensors measure the angular positions of the hard magnetic rotating wheels within the range of 0-360 degrees. The biaxial magnetoresistive angle sensors comprise two single-axis linear magnetoresistive sensors, wherein the single-axis linear magnetoresistive sensors are an X-axis magnetoresistive sensor or a Z-axis magnetoresistive sensor. The X-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component parallel to the tangent of the circumference of the hard magnetic rotating wheel. The Z-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component along the radial direction of the hard magnetic rotating wheel. This flow meter recording device has several advantages compared to electronic flow meters with X, Y biaxial angle sensor. These include flexibility of the mounting position, small adjacent hard magnetic rotating wheel interference, and low power consumption.

An automatic magnetic flow recording device, comprises a multitude of coaxially disposed hard magnetic rotating wheels wherein the hard magnetic rotating wheels are circular, and rotate with respect to each other by a predetermined transmission ratio. Each hard magnetic rotating wheel has at least one corresponding biaxial magnetoresistive angle sensor. The biaxial magnetoresistive angle sensors measure the angular positions of the hard magnetic rotating wheels within the range of 0-360 degrees. The biaxial magnetoresistive angle sensors comprise two single-axis linear magnetoresistive sensors, wherein the single-axis linear magnetoresistive sensors are an X-axis magnetoresistive sensor or a Z-axis magnetoresistive sensor. The X-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component parallel to the tangent of the circumference of the hard magnetic rotating wheel. The Z-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component along the radial direction of the hard magnetic rotating wheel. This flow meter recording device has several advantages compared to electronic flow meters with X, Y biaxial angle sensor. These include flexibility of the mounting position, small adjacent hard magnetic rotating wheel interference, and low power consumption.

A method of controlling a magnetization state using an imprinting technique may be provided. The method may include moving first and second magnetic structures, which have different magnetization states, toward each other and changing a magnetization state of the first or second magnetic structure, when a distance between the first and second magnetic structures is reduced. A magnetic field, which is produced by a magnetization state of one of the first and second magnetic structures, may be used to align a magnetization state of the other, when the magnetization state of the first or second magnetic structure is changed.

A method of controlling a magnetization state using an imprinting technique may be provided. The method may include moving first and second magnetic structures, which have different magnetization states, toward each other and changing a magnetization state of the first or second magnetic structure, when a distance between the first and second magnetic structures is reduced. A magnetic field, which is produced by a magnetization state of one of the first and second magnetic structures, may be used to align a magnetization state of the other, when the magnetization state of the first or second magnetic structure is changed.

A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells. Each of the tunnel junction unit cells may have a magnetization direction that is selectively changed by the in-plane current and the selection voltage.

A state-retaining logic cell may include a plurality of inverters, an output node non-volatile (NVM) storage cell, and an input node NVM storage cell. The plurality of inverters may include a feed-forward inverter and a feed-back inverter disposed in a back-to-back arrangement. The output node NVM storage cell may include first and second terminals, where the first terminal is connected adjacent an output node of the feed-forward and the feed-back inverters, and the second terminal is connected to a programming rail. The input node NVM storage cell may include first and second terminals, where the first terminal is connected adjacent an input node of the feed-forward and the feed-back inverters, and the second terminal is connected to the programming rail.

According to one embodiment, a memory device, includes a first memory cell, and a second memory cell adjacent to the first memory cell; and a sequencer configured to, when data is read from the first memory cell: perform a first read operation on the second memory cell; perform a second read operation on the first memory cell; perform a third read operation on the first memory cell by applying a voltage different from that applied in the second read operation to a gate of the second memory cell; and generate first data stored in the first memory cell and second data for correcting the first data, based on results of the first to third read operations.

A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.

A semiconductor device is provided. The semiconductor device includes: a processor core which processes program data; a first memory mounted on the same semiconductor chip as the processor core; a second memory including an MRAM cell having a first MTJ (Magnetic Tunnel Junction) structure; a third memory including an MRAM cell having a second MTJ structure different from the first MTJ structure, wherein the processor core selectively stores the program data in one of the first memory, the second memory and the third memory, on the basis of an attribute of the program data.