A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, and a reference layer, forming a cylindrical diode structure above and in electrical contact with the SOT-MRAM cell stack, forming a write line disposed in electrical contact with the SHE rail, and forming a read line disposed above and adjacent to an outer cylindrical electrode of the diode structure.

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, and a reference layer, forming a cylindrical diode structure above and in electrical contact with the SOT-MRAM cell stack, forming a write line disposed in electrical contact with the SHE rail, and forming a read line disposed above and adjacent to an outer cylindrical electrode of the diode structure.

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, a reference layer, and a diode structure, forming a write line disposed in electrical contact with the SHE rail, forming a protective dielectric layer covering a portion of the SOT-MRAM cell stack, and forming a read line disposed above and adjacent to the diode structure.

Provided are magnetoresistance effect element and a Heusler alloy in which an amount of energy required to rotate magnetization can be reduced. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co.sub.2Fe.sub.αZ.sub.β is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Mn, Cr, Al, Si, Ga, Ge, and Sn, α and β satisfy 2.3≤α+β, α<β, and 0.5<α<1.9, and the substitution element is an element different from the Z element and has a smaller magnetic moment than Co.

A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a plurality of stacks of vertical magnetoresistive random-access memory (MRAM) cell stacks, each stack formed upon a different bottom electrode, each stack including: a first vertical MRAM cell stack, the first vertical MRAM cell stack disposed upon a first bottom electrode, a first metal layer disposed above and in electrical contact with the first MRAM cell stack, and a second vertical MRAM cell stack, the second MRAM cell stack disposed above and in electrical contact with the first metal layer. Further by fabricating a low resistivity layer between adjacent stacks of vertical MRAM cell stacks, the low resistivity layer in electrical contact with the spin-Hall-Effect layer of each of the adjacent stacks.

There is provided a magnetoresistance effect element includes: a channel layer that extends in a first direction; a recording layer which includes a film formed from a ferromagnetic material, of which a magnetization state is changed to one of two or greater magnetization states, and which is formed on the channel layer; a non-magnetic layer that is provided on a surface of the recording layer; a reference layer which is provided on a surface of the non-magnetic layer, which includes a film formed from a ferromagnetic material, and of which a magnetization direction is fixed; a terminal pair that includes a first terminal and a second terminal which are electrically connected to the channel layer with an interval in the first direction, and to which a current pulse for bringing the recording layer to any one magnetization state with a plurality of pulses is input by flowing a current to the channel layer between the first terminal and the second terminal; and a third terminal that is electrically connected to the reference layer.

There is provided a magnetoresistance effect element includes: a channel layer that extends in a first direction; a recording layer which includes a film formed from a ferromagnetic material, of which a magnetization state is changed to one of two or greater magnetization states, and which is formed on the channel layer; a non-magnetic layer that is provided on a surface of the recording layer; a reference layer which is provided on a surface of the non-magnetic layer, which includes a film formed from a ferromagnetic material, and of which a magnetization direction is fixed; a terminal pair that includes a first terminal and a second terminal which are electrically connected to the channel layer with an interval in the first direction, and to which a current pulse for bringing the recording layer to any one magnetization state with a plurality of pulses is input by flowing a current to the channel layer between the first terminal and the second terminal; and a third terminal that is electrically connected to the reference layer.

A memory apparatus is provided which comprises: a stack comprising a magnetic insulating material and a transition metal dichalcogenide (TMD), wherein the magnetic insulating material has a first magnetization. The stack behaves as a free magnet. The apparatus includes a fixed magnet with a second magnetization. An interconnect is further provided which comprises a spin orbit material, wherein the interconnect is adjacent to the stack.

In some examples, a device includes a magnetic tunnel junction including a first Weyl semimetal layer, a second Weyl semimetal layer, and a dielectric layer positioned between the first and second Weyl semimetal layers. The magnetic tunnel junction may have a large tunnel magnetoresistance ratio, which may be greater than five hundred percent or even greater than one thousand percent.