A CAM array of compare memory cell circuits includes a decode column corresponding to each set, and each set includes at least one row of the compare memory cell circuits. Each decode column receives a set clock signal addressing the corresponding set and generates a set match signal in each row of the corresponding set. A column compare circuit generates compare data indicating a bit of a compare tag. A row match circuit generates, for each row, in response to the set match signal, a row match signal indicating the compare tag matches the binary tag stored in the row. Circuits and loads in a decode column employed to generate the set clock signal correspond to circuits generating the row match signal in each column of the CAM array to reduce a timing margin of the match indication and decrease the access time for the CAM array.

A CAM array of compare memory cell circuits includes a decode column corresponding to each set, and each set includes at least one row of the compare memory cell circuits. Each decode column receives a set clock signal addressing the corresponding set and generates a set match signal in each row of the corresponding set. A column compare circuit generates compare data indicating a bit of a compare tag. A row match circuit generates, for each row, in response to the set match signal, a row match signal indicating the compare tag matches the binary tag stored in the row. Circuits and loads in a decode column employed to generate the set clock signal correspond to circuits generating the row match signal in each column of the CAM array to reduce a timing margin of the match indication and decrease the access time for the CAM array.

Example memory devices and example methods for using memory devices are described. An example memory device may include a first electrical bitline, a second electrical bitline, a bitcell, and an optical waveguide wordline. The bitcell is configured to store a bit value and includes storage circuitry and a pair of light-effect transistor access devices. The storage circuitry includes at least one transistor. The pair of light-effect transistor access devices are arranged for connecting the bitcell to the first electrical bitline and the second electrical bitline. The optical waveguide wordline is arranged for routing an optical signal to the pair of light-effect transistor access devices.

A static random access memory (SRAM) includes an array of storage cells and a first sense amplifier. The array of storage cells is arranged as rows and columns. The rows correspond to word lines and the columns correspond to bit lines. The first sense amplifier includes a first transistor and a second transistor. The first sense amplifier is configured to provide a first read of a first storage cell of the array of storage cells. Based on the first read of the first storage cell failing to correctly read data stored in the first storage cell, the first sense amplifier is configured to increment a body bias of the first transistor a first time. In response to the body bias of the first transistor being incremented, the first sense amplifier is configured to provide a second read of the first storage cell.

A memory sub-system configured to schedule the transfer of data from a host system for write commands to reduce the amount and time of data being buffered in the memory sub-system. For example, after receiving a plurality of streams of write commands from a host system, the memory sub-system identifies a plurality of media units in the memory sub-system for concurrent execution of a plurality of write commands respectively. In response to the plurality of commands being identified for concurrent execution in the plurality of media units respectively, the memory sub-system initiates communication of the data of the write commands from the host system to a local buffer memory of the memory sub-system. The memory sub-system has capacity to buffer write commands in a queue, for possible out of order execution, but limited capacity for buffering only the data of a portion of the write commands that are about to be executed.

Methods for reading a memory are provided. In response to a first address signal, a first signal is obtained according to first data of the memory and a second signal is obtained according to second data of the memory by a decoding circuit. Binary representation of the first signal is complementary to that of the second signal. A first sensing signal is provided according to a reference signal and the first signal and a second sensing signal is provided according to the reference signal and the second signal by a sensing circuit. An output corresponding to the first sensing signal or the second sensing signal is output in response to a control signal, by an output buffer.

A memory circuit includes a reference node configured to carry a reference voltage having a reference voltage level, a power supply node configured to carry a power supply voltage having a power supply voltage level, a bit line coupled with a plurality of memory cells, a write circuit configured to charge the bit line by driving a voltage level on the bit line toward the power supply voltage level with a first current, and a switching circuit coupled between the power supply node and the bit line. The switching circuit is configured to receive the voltage level on the bit line, and responsive to a difference between the voltage level received on the bit line and the power supply voltage level being less than or equal to a threshold value, drive the voltage level on the bit line toward the power supply voltage level with a second current.

A memory circuit includes a reference node configured to carry a reference voltage having a reference voltage level, a power supply node configured to carry a power supply voltage having a power supply voltage level, a bit line coupled with a plurality of memory cells, a write circuit configured to charge the bit line by driving a voltage level on the bit line toward the power supply voltage level with a first current, and a switching circuit coupled between the power supply node and the bit line. The switching circuit is configured to receive the voltage level on the bit line, and responsive to a difference between the voltage level received on the bit line and the power supply voltage level being less than or equal to a threshold value, drive the voltage level on the bit line toward the power supply voltage level with a second current.

There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a source layer; a channel structure extending in a first direction from within the source layer; a source-channel contact layer surrounding the channel structure on the source layer; a first select gate layer overlapping with the source-channel contact layer and surrounding the channel structure; a stack including interlayer insulating layers and conductive patterns that are alternately stacked in the first direction and surrounding the channel structure, the stack overlapping with the first select gate layer; and a first insulating pattern that is formed thicker between the first select gate layer and the channel structure than between the stack and the channel structure.

There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a source layer; a channel structure extending in a first direction from within the source layer; a source-channel contact layer surrounding the channel structure on the source layer; a first select gate layer overlapping with the source-channel contact layer and surrounding the channel structure; a stack including interlayer insulating layers and conductive patterns that are alternately stacked in the first direction and surrounding the channel structure, the stack overlapping with the first select gate layer; and a first insulating pattern that is formed thicker between the first select gate layer and the channel structure than between the stack and the channel structure.