Methods, systems, and devices for access line management for an array of memory cells are described. Some memory devices may include a plate that is coupled with memory cells associated with a plurality of digit lines and/or a plurality of word lines. Because the plate is coupled with a plurality of digit lines and/or word lines, unintended cross-coupling between various components of the memory device may be significant. To mitigate the impact of unintended cross-coupling between various components, the memory device may float unselected word lines during one or more portions of an access operation. Accordingly, a voltage of each unselected word line may relate to the voltage of the plate as changes in plate voltage may occur.

A memory cell in capacitive logic, including a bistable system including a fixed element and a mobile element capable of taking one or the other of two stable positions with respect to the fixed element; a read device including a variable-capacitance capacitor including a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and an electrically controllable write device for placing the mobile element in one or the other of its two stable positions.

A memory cell in capacitive logic, including a bistable system including a fixed element and a mobile element capable of taking one or the other of two stable positions with respect to the fixed element; a read device including a variable-capacitance capacitor including a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and an electrically controllable write device for placing the mobile element in one or the other of its two stable positions.

A memory cell in capacitive logic, including a bistable system including a fixed element and a mobile element capable of taking one or the other of two stable positions with respect to the fixed element; a read device including a variable-capacitance capacitor including a first fixed electrode and a second mobile electrode rigidly fixed to the mobile element; and an electrically controllable write device for placing the mobile element in one or the other of its two stable positions.

A non-volatile memory includes a back gate, a first graphene ribbon layer, a dielectric layer, a second graphene ribbon layer and a porous dielectric layer. The back gate is disposed in a substrate. The first graphene ribbon layer is disposed on the substrate. The dielectric layer covers the first graphene ribbon layer but exposes an exposed part of the first graphene ribbon layer. The second graphene ribbon layer including two end parts connected by a cantilever part is disposed above the first graphene ribbon layer, and the cantilever part is right above the exposed part of the first graphene ribbon layer. The porous dielectric layer is disposed on the dielectric layer and seals the cantilever part. The present invention also provides a method of forming said non-volatile memory.

A roller electric contact comprises a roller comprising a shaft and a plurality of conductive discs electrically separated by an insulating material. The shaft extends through a rotational axis of the roller. A housing comprises slots in which the shaft of the roller is positioned, the slots configured to direct a non-rotational movement of the roller. A plurality of leaf springs are disposed in the housing. The leaf springs comprise an electrically conductive material. The plurality of conductive discs are spaced on the roller so that at least one of the conductive discs contact each of the plurality of leaf springs. A plurality of conductive wires extend from the roller electric contact, each of the plurality of conductive wires making electrical contact with one of the leaf springs.

A roller electric contact comprises a roller comprising a shaft and a plurality of conductive discs electrically separated by an insulating material. The shaft extends through a rotational axis of the roller. A housing comprises slots in which the shaft of the roller is positioned, the slots configured to direct a non-rotational movement of the roller. A plurality of leaf springs are disposed in the housing. The leaf springs comprise an electrically conductive material. The plurality of conductive discs are spaced on the roller so that at least one of the conductive discs contact each of the plurality of leaf springs. A plurality of conductive wires extend from the roller electric contact, each of the plurality of conductive wires making electrical contact with one of the leaf springs.

The present disclosure provides a memory device including a first electrode; a second electrode; a transistor, and a nanotube. The transistor includes a first node, a second node and a control node, wherein the second node is electrically coupled to the second electrode, and the control node is configured to generate a channel between the first node and the second node. A first end of the nanotube is electrically coupled to a contact, and a second end of the nanotube is positioned between the first electrode and the second electrode. The second end electrically connects the first electrode to form a non-volatile open state of the memory device, or the second end electrically connects the second electrode to form a non-volatile closed state of the memory device. The non-volatile open state represents a first logic state and the non-volatile closed state represents a second logic state.

The present disclosure provides a memory device including a first electrode; a second electrode; a transistor, and a nanotube. The transistor includes a first node, a second node and a control node, wherein the second node is electrically coupled to the second electrode, and the control node is configured to generate a channel between the first node and the second node. A first end of the nanotube is electrically coupled to a contact, and a second end of the nanotube is positioned between the first electrode and the second electrode. The second end electrically connects the first electrode to form a non-volatile open state of the memory device, or the second end electrically connects the second electrode to form a non-volatile closed state of the memory device. The non-volatile open state represents a first logic state and the non-volatile closed state represents a second logic state.

A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.