An apparatus is disclosed herein. The apparatus comprises a non-linear photonic element for outputting a signal and idler photon pair. The apparatus further comprises a module configured to, based on receiving one or more control signals, controllably store photons and controllably output stored photons. The apparatus further comprises a detector arrangement comprising one or more detectors for detecting light. The module is further configured to receive at least one of the signal and idler photons of the pair. The module is further configured to at least partially store one of the signal or idler photons of the pair. The module is further configured to output the said at least partially stored signal or idler photon along an optical path towards the at least one detectors. The apparatus is configured to direct the other of the signal or idler photon towards the detector arrangement.

A quantum information storage device includes: a first gas cell and a second gas cell; a light splitter configured to cause first light in a first state to travel along a first optical path intersecting the first gas cell and cause the first light in a second state to travel along a second optical path intersecting the second gas cell, the first light in the first state and the first light in the second state being among the first light emitted from a first light source; a second light source configured to emit, to the first gas cell and the second gas cell, second light that is capable of bringing an atom into a two-photon resonance state together with the first light; and a light synthesizer disposed at a subsequent section of the first gas cell and the second gas cell and configured to synthesize third light generated when a photon included in the second light acts on the atom in the two-photon resonance state in the first gas cell and the second gas cell. An inner wall of each of the first gas cell and the second gas cell is coated with a relaxation prevention film that prevents relaxation of quantum superposition in the two-photon resonance state.

A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

A ceramic waveguide includes: a doped metal oxide ceramic core layer; and at least one cladding layer comprising the metal oxide surrounding the core layer, such that the core layer includes an erbium dopant and at least one rare earth metal dopant being: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, scandium, or oxides thereof, or at least one non-rare earth metal dopant comprising zirconium or oxides thereof. Also included is a quantum memory including: at least one doped polycrystalline ceramic optical device with the ceramic waveguide and a method of fabricating the ceramic waveguide.

A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).

An apparatus has a plurality of photonic elements. At least two photonic elements forming a cavity. At least one photonic element receives first electromagnetic radiation from outside the cavity and transmits the first electromagnetic radiation into the photonic cavity. At least one photonic element receives second electromagnetic radiation from outside the cavity and transmits the second radiation into the photonic cavity. A photonic memory disposed in the cavity comprises an atomic system that: receives a photon field of first radiation; receives second radiation; stores at least a portion of the field of the photon in the atomic system via an atomic transition using the photon and the received second radiation; emits the stored portion of the photon upon receiving third electromagnetic radiation. The apparatus directs the photon into the photonic memory, after being reflected into the photonic cavity by at least one of the photonic elements; and outputs the emitted portion of the field into the cavity. The apparatus controls the photon flux density of the third electromagnetic radiation to control the superposition of the said stored field portion.

A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

A ceramic waveguide includes: a doped metal oxide ceramic core layer; and at least one cladding layer comprising the metal oxide surrounding the core layer, such that the core layer includes an erbium dopant and at least one rare earth metal dopant being: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, scandium, or oxides thereof, or at least one non-rare earth metal dopant comprising zirconium or oxides thereof. Also included is a quantum memory including: at least one doped polycrystalline ceramic optical device with the ceramic waveguide and a method of fabricating the ceramic waveguide.

One embodiment provides an optical encoder. The optical encoder includes an optical comb source to generate a multi-wavelength optical signal; a number of optical filters sequentially coupled to the optical comb source, with a respective optical filter being tunable to pass or block a particular wavelength of the multi-wavelength optical signal based on a corresponding bit value of a multi-bit search word; and a common output for the optical filters to output the filtered multi-wavelength optical signal, which encodes the multi-bit search word and can be used as an optical search signal for searching an optical content-addressable memory (CAM).

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.