A method of manufacturing a doped polycrystalline ceramic optical device includes mixing a plurality of transition metal complexes and a plurality of rare-earth metal complexes to form a metal salt solution, heating the metal salt solution to form a heated metal salt solution, mixing the heated metal salt solution and an organic precursor to induce a chemical reaction between the heated metal salt solution and the organic precursor to produce a plurality of rare-earth doped crystalline nanoparticles, and sintering the plurality of rare-earth doped nanoparticles to form a doped polycrystalline ceramic optical device having a rare-earth element dopant that is uniformly distributed within a crystal lattice of the doped polycrystalline ceramic optical device.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

A method of switching between first and second states of a van der Waals heterostructure, vdWH, memory device, a vdWH memory device, and a method of fabricating a vdWH memory device. The vdWH memory device comprises a first two-dimensional, 2D, material; and a second 2D material, wherein, in a first storage state of the memory device, an interface between the first and second 2D material comprises interfacial states; and wherein, in a second storage state of the memory device, interfacial states are modulated compared to the first memory state.

A component includes a memory region containing optically active material, a control arrangement configured to provide at least one control signal configured to change optical properties of the optically active material, and a detector configured to detect a change in the optical properties of the optically active material. The detector includes an evaluation input region configured to receive at least one evaluation input signal and an evaluation output region configured to provide an evaluation output signal. The memory region is arranged between the evaluation input region and the evaluation output region, and the control arrangement adjoins the memory region.

A memory cell comprising a first layer of magnetic metal; a Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction spacer coupled to the first layer of magnetic metal; and a second layer of magnetic layer coupled to the RKKY spacer. The effective thickness of the RKKY spacer is changed by applied terahertz radiation resiling in changing the sign of RKKY interaction from a first sign of RKKY interaction to a second sign of RKKY interaction; thus, enabling an RKKY-tunable magnetic memory cell; wherein the first state of the memory corresponds to the first sign of RKKY interaction, and wherein the second state of the memory corresponds to the second sign of RKKY interaction.

Devices, systems, and methods for non-volatile storage include a well activation device operable to modify one or more wells from a plurality of wells of a flow cell to provide a set of readable wells. Readable wells are configured to allow exposure of a well to substances from nucleotide sequencing fluids, and prevent exposure to other substances and fluids, such as nucleotide synthesizing fluids. The well activation device may also modify wells to provide a set of writeable wells. This set of wells is configured to allow exposure to the nucleotide synthesizing fluids and substances; and prevent exposure to the nucleotide sequencing fluids and substances. There may also be provisions made for risk mitigation for data errors such as generating commands to write specified data to a nucleotide sequence associated with a particular location in a storage device, reading the nucleotide sequence and performing a comparison.

Various implementations are related to an apparatus with memory cells arranged in columns and rows, and the memory cells are accessible with a column control voltage for accessing the memory cells via the columns and a row control voltage for accessing the memory cells via the rows. The apparatus may include neural network circuitry having neuronal junctions that are configured to receive, record, and provide information related to incoming voltage spikes associated with input signals based on resistance through the neuronal junctions. The apparatus may include stochastic re-programmer circuitry that receives the incoming voltage spikes, receives the information provided by the neuronal junctions, and reconfigure the information recorded in the neuronal junctions based on the incoming voltage spikes associated with the input signals along with a programming control signal provided by the memory circuitry.

Present disclosure relates to a method and a system for searching through a Ternary Content Addressable Memory (TCAM). The system comprises a Digital Light Processing System (DLP) receiving an input query. The DLP comprises a 2-Dimensional array of digital micro mirrors configured for reflecting light from one or more input sources in the TCAM to a predefined position. The system further comprises a detection screen having a detection area. The detection area is configured for generating an image of a resultant pixel according to the reflection of the light, wherein the resultant pixel corresponds to a search result for an input query.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

Multistate non-volatile photonic memory devices are disclosed. The photonic devices comprise phase change materials with broadband transparencies used to store discretized information with negligible losses in the 0 state. The photonic memories comprise multiple configurations for reading and writing multi-bit words. The reading mechanisms comprises schemes based on light-absorption (FIG. 1), shift in resonances of a cavity (ring resonator, photonic crystal; FIG. 2) or interferometric schemes (FIG. 3). The photonic memory devices employ multiple techniques for writing electrically (FIG. 4 and related performance) and/or all-optically (FIGS. 7-10). The optical writing can be performed with pulsed laser light coming either from free space or on-chip using dedicated writing lines and opportune drops.