Multistate non-volatile photonic memory devices are disclosed. The photonic devices comprise phase change materials with broadband transparencies used to store discretized information with negligible losses in the 0 state. The photonic memories comprise multiple configurations for reading and writing multi-bit words. The reading mechanisms comprises schemes based on light-absorption (FIG. 1), shift in resonances of a cavity (ring resonator, photonic crystal; FIG. 2) or interferometric schemes (FIG. 3). The photonic memory devices employ multiple techniques for writing electrically (FIG. 4 and related performance) and/or all-optically (FIGS. 7-10). The optical writing can be performed with pulsed laser light coming either from free space or on-chip using dedicated writing lines and opportune drops.

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate; a plurality of variable resistance elements formed over the substrate and arranged as a matrix, spacer patterns formed over the substrate to surround the variable resistance elements in the matrix with a thickness sufficient to define contact holes between the variable resistance elements, and a source line contact buried in the contact hole.

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate; a plurality of variable resistance elements formed over the substrate and arranged as a matrix, spacer patterns formed over the substrate to surround the variable resistance elements in the matrix with a thickness sufficient to define contact holes between the variable resistance elements, and a source line contact buried in the contact hole.

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

Implementations described and claimed herein provide a high-capacity, high-bandwidth scalable storage device. The scalable storage device includes a layer stack including at least one memory layer and at least one optical control layer positioned adjacent to the memory layer. The memory layer includes a plurality of memory cells and the optical control layer is adapted to receive optically-encoded read/write signals and to effect read and write operations to the plurality of memory cells through an electrical interface.

Implementations described and claimed herein provide a high-capacity, high-bandwidth scalable storage device. The scalable storage device includes a layer stack including at least one memory layer and at least one optical control layer positioned adjacent to the memory layer. The memory layer includes a plurality of memory cells and the optical control layer is adapted to receive optically-encoded read/write signals and to effect read and write operations to the plurality of memory cells through an electrical interface.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

System and method to localize a position of an RRAM filament of resistive memory device at very low bias voltages using a scanning laser beam. The approach is non-invasive and allows measurement of a large number of devices for creating statistics relating to the filament formation. A laser microscope system is configured to perform a biasing the RRAM cell with voltage (or current). Concurrent to the applied bias, a laser beam is generated and aimed at different positions of the RRAM cell (e.g., by a raster scanning). Changes in the current (or voltage) flowing through the cell are measured. The method creates a map of the current (or voltage) changes at the different laser positions and detects a spot in the map corresponding to higher (or lower) current (or voltage). The method determines the (x,y) position of the spot compared to the edge/center of the RRAM cell.

In example implementations, an optical gate is provided. The optical gate receives at least one optical signal via a waveguide of an optical memory gate. The optical gate compares a wavelength of the at least one optical signal to a resonant wavelength associated with a resonator. When the wavelength of the at least one optical signal matches the resonant wavelength, a value that is stored in the resonator is read out via the at least one optical signal. Then, the at least one optical signal with the value that is read out is transmitted out of the optical gate.

Systems and methods for an optical ternary content addressable memory (TCAM) are provided. The optical TCAM implements a time-division multiplexing (TDM) based encoding scheme to encode each bit position of a search word in the time domain. Each bit position is associated with at least two time slots. The encoded optical signal comprising the search word is routed through one or more modulators configured to represent a respective TCAM stored word. If a mismatch between at least one bit position of the search word and at least one TCAM stored word occurs, a photodetector or photodetector array will detect light.