A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type, the second region being formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; a gate positioned between the first and second regions and above the top surface; and a nonvolatile memory configured to store data upon transfer from the body region.

Systems and methods are disclosed including a processing device operatively coupled to a first and a second memory device. The processing device can receive a set of data access requests, from a host system, in a first order and execute the set of data access requests in a second order. The processing device can further identify a late data access request of the set of data access requests and determine whether a data structure in a local memory associated with the processing device includes a previous outstanding data access request corresponding to an address associated with the late data access request. Responsive to determining that the data structure includes an indication of a previous outstanding data access request corresponding to the address associated with the late data access request, identifying a type of data dependency associated with the previous outstanding data access request and performing one or more operations associated with the type of data dependency.

Systems and methods are disclosed including a first memory component, a second memory component having a lower access latency than the first memory component and acting as a cache for the first memory component, and a processing device operatively coupled to the first and second memory components. The processing device can perform operations including receiving a data access operation and, responsive to determining that a data structure includes an indication of an outstanding data transfer of data associated with a physical address of the data access operation, determining whether an operation to copy the data, associated with the physical address, from the first memory component to the second memory component is scheduled to be executed. The processing device can further perform operations including determining to delay a scheduling of an execution of the data access operation until the operation to copy the data is executed.

An integrated circuit (IC) device may include a single substrate that includes a single chip, and a plurality of memory cells spaced apart from one another on the substrate and having different structures. Manufacturing the IC device may include forming a plurality of first word lines in a first region of the substrate, and forming a plurality of second word lines in or on a second region of the substrate. Capacitors may be formed on the first word lines. Source lines may be formed on the second word lines. An insulation layer that covers the plurality of capacitors and the plurality of source lines may be formed in the first region and the second region. A variable resistance structure may be formed at a location spaced apart from an upper surface of the substrate by a first vertical distance, in the second region.

A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type, the second region being formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; a gate positioned between the first and second regions and above the top surface; and a nonvolatile memory configured to store data upon transfer from the body region.

Implementations of the present disclosure include methods, systems, and computer-readable storage mediums for receiving source code of an application, providing intermediate code based on the source code, the intermediate code including at least one instruction for profiling at least one object of the application, providing a statistics file by processing the intermediate code based on a memory profiling library, processing the statistics file based on a plurality of models to provide a list of objects, the list of objects identifying types of memory respective objects should be stored to in a hybrid main memory system, and storing modified source code that is provided based on the source code and the list of objects.

An embodiment of a semiconductor apparatus may include technology to convert an analog voltage level of a memory cell of a multi-level memory to a multi-bit digital value, and determine a single-bit value of the memory cell based on the multi-bit digital value. Some embodiments may also include technology to track a temporal history of accesses to the memory cell for a duration in excess of ten seconds, and determine the single-bit value of the memory cell based on the multi-bit digital value and the temporal history. Other embodiments are disclosed and claimed.

A data recorder for permanently storing pre-event data may include a read-write memory with a plurality of bit cells in the read-write memory. Each bit cell may have a bit state of a high value or a low value. A fusible structure in the data recorder may include a morphable element associated with each bit cell. A temperature-triggered module may thermally couple to the ambient environment and may electrically couple to each morphable element. The temperature-triggered module may be further configured to determine if a parameter of the ambient environment exceeds a predetermined threshold, and if so may then transmit a burn signal to the fusible structure so that each morphable element permanently secures the bit state for each bit cell.

Apparatus, systems, and methods to implement polarity based data transfer function on a write data unit are described. The transfer function takes into account certain data values that are common, and transforms them to predetermined values that consume less power and are less common. Similarly, these predetermined values are transformed to the common values.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.