According to an embodiment, a storage device includes a plurality of storage elements, a plurality of readout circuits, and a delay circuit. The readout circuits include a first readout circuit and a second readout circuit different from the first readout circuit. The readout circuits each determines data stored in a corresponding one of the storage elements and outputs a result of the determination, in response to receipt of an activation signal. The delay circuit is connected at a first end to the first readout circuit and connected at a second end to the second readout circuit. The delay circuit supplies the activation signal to the second readout circuit with a time interval after supplying the activation signal to the first readout circuit.

A memory device is provided. The memory device includes a first transistor and a second transistor connected in series with the first transistor. The second transistor is programmable between a first state and a second state. A bit line connected to the second transistor. A sense amplifier connected to the bit line. The sense amplifier is operative to sense data from the bit line. A feedback circuit connected to the sense amplifier, wherein the feedback circuit is operative to control a bit line current of the bit-line.

A memory device is provided. The memory device includes a first transistor and a second transistor connected in series with the first transistor. The second transistor is programmable between a first state and a second state. A bit line connected to the second transistor. A sense amplifier connected to the bit line. The sense amplifier is operative to sense data from the bit line. A feedback circuit connected to the sense amplifier, wherein the feedback circuit is operative to control a bit line current of the bit-line.

A one-time programmable (OTP) circuit. The OTP circuit includes a non-volatile OTP memory disposed on a first circuit die. The OTP memory includes a floating gate terminal. The OTP circuit also includes a cross-coupled latch disposed on the first circuit die and coupled to the OTP memory and volatile memory input circuitry disposed on the first circuit die and coupled to the cross-coupled latch. The volatile memory input circuitry is configured to receive a test value and write the test value into the cross-coupled latch. The OTP circuit is configured to receive a programming command and store the test value in the OTP memory in response to receipt of the programming command.

A one-time programmable (OTP) circuit. The OTP circuit includes a non-volatile OTP memory disposed on a first circuit die. The OTP memory includes a floating gate terminal. The OTP circuit also includes a cross-coupled latch disposed on the first circuit die and coupled to the OTP memory and volatile memory input circuitry disposed on the first circuit die and coupled to the cross-coupled latch. The volatile memory input circuitry is configured to receive a test value and write the test value into the cross-coupled latch. The OTP circuit is configured to receive a programming command and store the test value in the OTP memory in response to receipt of the programming command.

The present invention is related to a clock generating device for generating an internal clock signal having a frequency correlated with a clock frequency of an external oscillator when the clock frequency of the external oscillator is not specified in advance. A clock generating device 105 comprises a memory 134 and a PLL circuit 120. The memory 134 is configured to store information about a frequency of an external clock signal generated by an external oscillator 200 at a predetermined timing. The PLL circuit 120 generates a second clock signal correlated with a first clock signal based on the information stored in the memory 134.

The present invention is related to a clock generating device for generating an internal clock signal having a frequency correlated with a clock frequency of an external oscillator when the clock frequency of the external oscillator is not specified in advance. A clock generating device 105 comprises a memory 134 and a PLL circuit 120. The memory 134 is configured to store information about a frequency of an external clock signal generated by an external oscillator 200 at a predetermined timing. The PLL circuit 120 generates a second clock signal correlated with a first clock signal based on the information stored in the memory 134.

An apparatus including a Correlated Electron Switch (CES) element and a programing circuit is provided. The programing circuit provides a programing signal to the CES element to program the CES element to an impedance state of multiple impedance states when a number of times the CES element has been programed is less than a threshold.

A memory array comprising a word line and a bit line is disclosed. Each of a plurality of memory cells of the memory array has a first terminal connected to the bit line and a current path between the first terminal and a respective second terminal. A first memory cell of the plurality of memory cells has the second terminal coupled to receive a first supply voltage when selected by the word line. A second memory cell of the plurality of memory cells has the second terminal coupled to receive a voltage different from the first supply voltage when the first memory cell is selected by the word line.

A memory array comprising a word line and a bit line is disclosed. Each of a plurality of memory cells of the memory array has a first terminal connected to the bit line and a current path between the first terminal and a respective second terminal. A first memory cell of the plurality of memory cells has the second terminal coupled to receive a first supply voltage when selected by the word line. A second memory cell of the plurality of memory cells has the second terminal coupled to receive a voltage different from the first supply voltage when the first memory cell is selected by the word line.