A signal processing method includes the following operations: receiving an input signal and analyzing the input signal to generate a plurality of bit codes by a signal receiving circuit; temporarily storing a first part of the plurality of bit codes according to a time sequence by a shift register and starting a decoder when the shift register is full; and performing a boundary calibration according to the first part of the plurality of bit codes by the decoder when the first part of the plurality of bit codes meets a decoding table rule and a boundary detection rule.

In a semiconductor device and a shift register, low noise is caused in a non-selection period and a transistor is not always on. First to fourth transistors are provided. One of a source and a drain of the first transistor is connected to a first wire, the other of the source and the drain thereof is connected to a gate electrode of the second transistor, and a gate electrode thereof is connected to a fifth wire. One of a source and a drain of the second transistor is connected to a third wire and the other of the source and the drain thereof is connected to a sixth wire.

To suppress malfunctions in a shift register circuit. A shift register having a plurality of flip-flop circuits is provided. The flip-flop circuit includes a transistor 11, a transistor 12, a transistor 13, a transistor 14, and a transistor 15. When the transistor 13 or the transistor 14 is turned on in a non-selection period, the potential of a node A is set, so that the node A is prevented from entering into a floating state.

A shift register, a driving method therefor, a gate driving circuit and a display device. The shift register comprises: an input module, a first reset module, a second reset module, an output module. The input module is configured to write input signal of a signal input terminal STU into second node Q2 through second clock signal terminal CLKB, and to connect Q2 with first node Q1 through STU. The first reset module is configured to write signal of first direct current signal terminal into third node Q3 through STU, and to write reset signal of reset signal terminal STD into Q3 and connect Q2 with Q1 through STD. The second reset module is configured to write a signal of the first direct current signal terminal into a signal output terminal OUT through Q3. The output module is configured to write a first clock signal of CLKA into OUT through Q1.

The present disclosure provides a shift register, a drive method thereof, and a gate drive circuit. The shift register includes an input circuit, a reset circuit, a first output circuit, and a second output circuit. The input circuit is configured to provide an input signal from an input terminal to a first node. The reset circuit is configured to provide a first voltage from a first voltage terminal to the first node under the control of a reset signal from a reset signal terminal. The first output circuit is configured to output from a first output terminal one of a first clock signal and a second clock signal as a first scan signal. The second output circuit is configured to output from a second output terminal the other of the first clock signal and the second clock signal as a second scan signal.

To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10.sup.−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

To suppress malfunctions in a shift register circuit. A shift register having a plurality of flip-flop circuits is provided. The flip-flop circuit includes a transistor 11, a transistor 12, a transistor 13, a transistor 14, and a transistor 15. When the transistor 13 or the transistor 14 is turned on in a non-selection period, the potential of a node A is set, so that the node A is prevented from entering into a floating state.

The present system is directed to a modular apparatus that may be assembled and disassembled repeatedly without the use of tools. The modular system includes connectors that may be fixed to the underside of a plank and then engaged with leg portions. The connectors further include channels to accommodate retention members of additional attachments, such as covers, guards, signage, or racks that may be added onto the modular apparatus to increase its utility. The retention members mate with the connectors to connect and securely hold the attachment and can be removed from the connectors all without the need for tools.

A shift register includes stages each constituted by a unit circuit provided with a thin-film transistor (separation transistor) that separates a control node into an output-side first control node and an input-side second control node and a capacitor whose first end is connected to the second control node. The thin-film transistor (separation transistor) has a control terminal that is supplied with a high-level DC power supply voltage. Typically, the channel width of a thin-film transistor (first output control transistor) that controls output from a unit circuit is ten or more times greater than the channel width of the thin-film transistor (separation transistor).